The electronic state of fullerenes doped by oxygen

O. P. Dmytrenko, N. P. Kulish, Yu I. Prylutskyy, T. V. Rodionova, T. D. Shatniy, U. Ritter, L. Carta-Abelmann, P. Scharff, T. Braun

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The spectral studies of photoluminescence, refrative index (n), coefficient of absorption (k), components of dielectric constant ε, and optical conductivity σ in the S{cyrillic}60 films doped by oxygen with the varied conditions of annealing are carried out. The density of electronic states (g(E)), transfer of charges (ΔZ), and optical conductivity (σ(E)) for S{cyrillic}60 fullerenes in the fcc lattice, and also for some of their compounds with oxygen are calculated from the first principles. It is shown that for explaining the changes in the luminescence spectra and the optical conductivity of the above materials doped by oxygen it is necessary to consider two states, one of which corresponds the chemically bound, and another the intercalated oxygen molecules.

Original languageEnglish
Pages (from-to)7937-7941
Number of pages5
JournalThin Solid Films
Volume516
Issue number21
DOIs
Publication statusPublished - Sep 1 2008

Fingerprint

Fullerenes
Electronic states
Optical conductivity
fullerenes
Oxygen
oxygen
electronics
conductivity
Electronic density of states
Luminescence
Photoluminescence
Permittivity
Annealing
permittivity
luminescence
photoluminescence
Molecules
annealing
coefficients
molecules

Keywords

  • Doping
  • Electron structure
  • Fullerene films
  • Luminescence
  • Optical conductivity
  • Transfer of charges

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Dmytrenko, O. P., Kulish, N. P., Prylutskyy, Y. I., Rodionova, T. V., Shatniy, T. D., Ritter, U., ... Braun, T. (2008). The electronic state of fullerenes doped by oxygen. Thin Solid Films, 516(21), 7937-7941. https://doi.org/10.1016/j.tsf.2008.05.051

The electronic state of fullerenes doped by oxygen. / Dmytrenko, O. P.; Kulish, N. P.; Prylutskyy, Yu I.; Rodionova, T. V.; Shatniy, T. D.; Ritter, U.; Carta-Abelmann, L.; Scharff, P.; Braun, T.

In: Thin Solid Films, Vol. 516, No. 21, 01.09.2008, p. 7937-7941.

Research output: Contribution to journalArticle

Dmytrenko, OP, Kulish, NP, Prylutskyy, YI, Rodionova, TV, Shatniy, TD, Ritter, U, Carta-Abelmann, L, Scharff, P & Braun, T 2008, 'The electronic state of fullerenes doped by oxygen', Thin Solid Films, vol. 516, no. 21, pp. 7937-7941. https://doi.org/10.1016/j.tsf.2008.05.051
Dmytrenko OP, Kulish NP, Prylutskyy YI, Rodionova TV, Shatniy TD, Ritter U et al. The electronic state of fullerenes doped by oxygen. Thin Solid Films. 2008 Sep 1;516(21):7937-7941. https://doi.org/10.1016/j.tsf.2008.05.051
Dmytrenko, O. P. ; Kulish, N. P. ; Prylutskyy, Yu I. ; Rodionova, T. V. ; Shatniy, T. D. ; Ritter, U. ; Carta-Abelmann, L. ; Scharff, P. ; Braun, T. / The electronic state of fullerenes doped by oxygen. In: Thin Solid Films. 2008 ; Vol. 516, No. 21. pp. 7937-7941.
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