The electrical properties of Al/Ni/Ge/n-GaAs interfaces

L. Dávid, B. Kovács, I. Mojzes, Zs Kincses, L. Dobos

Research output: Contribution to journalArticle

Abstract

An Al(130 nm)/Ni(30 nm)/Ge(40 nm) layer deposited onto n-type GaAs by thermal evaporation was electrically studied. The electrical properties of these contacts were characterized by current-voltage curves and contact noise measurements. The samples have been annealed for different times at different temperatures in flowing forming gas, H2:N2 (5%:95%), in a tube furnace. The I-V characteristics of the AlNiGe samples annealed at different temperatures show Schottky character. The I-V plots of the samples that had high noise indexes show a double slope structure.

Original languageEnglish
Pages (from-to)787-793
Number of pages7
JournalMicroelectronics Reliability
Volume38
Issue number5
Publication statusPublished - 1998

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Electric properties
electrical properties
Thermal evaporation
Furnaces
Gases
noise measurement
Temperature
furnaces
Electric potential
plots
evaporation
slopes
tubes
temperature
electric potential
curves
gases
gallium arsenide

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Dávid, L., Kovács, B., Mojzes, I., Kincses, Z., & Dobos, L. (1998). The electrical properties of Al/Ni/Ge/n-GaAs interfaces. Microelectronics Reliability, 38(5), 787-793.

The electrical properties of Al/Ni/Ge/n-GaAs interfaces. / Dávid, L.; Kovács, B.; Mojzes, I.; Kincses, Zs; Dobos, L.

In: Microelectronics Reliability, Vol. 38, No. 5, 1998, p. 787-793.

Research output: Contribution to journalArticle

Dávid, L, Kovács, B, Mojzes, I, Kincses, Z & Dobos, L 1998, 'The electrical properties of Al/Ni/Ge/n-GaAs interfaces', Microelectronics Reliability, vol. 38, no. 5, pp. 787-793.
Dávid L, Kovács B, Mojzes I, Kincses Z, Dobos L. The electrical properties of Al/Ni/Ge/n-GaAs interfaces. Microelectronics Reliability. 1998;38(5):787-793.
Dávid, L. ; Kovács, B. ; Mojzes, I. ; Kincses, Zs ; Dobos, L. / The electrical properties of Al/Ni/Ge/n-GaAs interfaces. In: Microelectronics Reliability. 1998 ; Vol. 38, No. 5. pp. 787-793.
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