The effect of the metal, interface, and semiconductor parameters on the electrical behaviour of Schottky junctions

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of the metal, interface and semiconductor parameters on the barrier height of n-type Schottky junctions is analysed by means of a general expression.

Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
EditorsAnton Heuberger, Heiner Ryssel, Peter Lange
PublisherIEEE Computer Society
Pages603-606
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
DOIs
Publication statusPublished - 1989
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: Sep 11 1989Sep 14 1989

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period9/11/899/14/89

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Horváth, Z. J. (1989). The effect of the metal, interface, and semiconductor parameters on the electrical behaviour of Schottky junctions. In A. Heuberger, H. Ryssel, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 603-606). [5436530] (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1007/978-3-642-52314-4_126