The effect of the metal, interface, and semiconductor parameters on the electrical behaviour of Schottky junctions

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of the metal, interface and semiconductor parameters on the barrier height of n-type Schottky junctions is analysed by means of a general expression.

Original languageEnglish
Title of host publicationESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference
EditorsHeiner Ryssel, Anton Heuberger, Peter Lange
PublisherIEEE Computer Society
Pages603-606
Number of pages4
ISBN (Electronic)0387510001
ISBN (Print)9780387510002
Publication statusPublished - Jan 1 1989
Event19th European Solid State Device Research Conference, ESSDERC 1989 - Berlin, Germany
Duration: Sep 11 1989Sep 14 1989

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other19th European Solid State Device Research Conference, ESSDERC 1989
CountryGermany
CityBerlin
Period9/11/899/14/89

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Horváth, Z. J. (1989). The effect of the metal, interface, and semiconductor parameters on the electrical behaviour of Schottky junctions. In H. Ryssel, A. Heuberger, & P. Lange (Eds.), ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference (pp. 603-606). [5436530] (European Solid-State Device Research Conference). IEEE Computer Society.