The effective resistivity is calculated for a simple cell structure by means of the Boltzmann equation. In less heavily deformed metals the cell structure has only a negligible effect on the residual resistivity. In heavily deformed metals the observed DMR is in the same order of magnitude as that arising from the presence of the cell structure. Δ/ϱ0 decreases with increasing amount of cold work and this experimental result suggests that the DMR arising from the anisotropic dislocation scattering is larger than the DMR due to the cell structure.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics