The effect of the dislocation distribution on the electrical resistivity in deformed metals

I. Gaal, L. Uray, T. Vicsek

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effective resistivity is calculated for a simple cell structure by means of the Boltzmann equation. In less heavily deformed metals the cell structure has only a negligible effect on the residual resistivity. In heavily deformed metals the observed DMR is in the same order of magnitude as that arising from the presence of the cell structure. Δ/ϱ0 decreases with increasing amount of cold work and this experimental result suggests that the DMR arising from the anisotropic dislocation scattering is larger than the DMR due to the cell structure.

Original languageEnglish
Pages (from-to)755-764
Number of pages10
Journalphysica status solidi (a)
Volume31
Issue number2
DOIs
Publication statusPublished - Oct 16 1975

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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