The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices

Mattia Borgarino, Raffaele Losi, Fausto Fantini, Martin Schüßler, Hans Ludwig Hartnagel, Secondo Franchi, A. Bosacchi

Research output: Contribution to journalArticle

Abstract

The impact of the base dopant level on the stability of Bedoped AlGaAs/GaAs HBTs is investigated by means of forward current stresses carried out at room temperature. The results show that the degradation mechanism is due to the Beryllium outdiffusion: the higher is the base dopant concentration, the larger the degradation.

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalAlta Frequenza Rivista Di Elettronica
Volume9
Issue number5
Publication statusPublished - Sep 1997

Fingerprint

Heterojunction bipolar transistors
Doping (additives)
Degradation
Beryllium
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Borgarino, M., Losi, R., Fantini, F., Schüßler, M., Hartnagel, H. L., Franchi, S., & Bosacchi, A. (1997). The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices. Alta Frequenza Rivista Di Elettronica, 9(5), 56-59.

The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices. / Borgarino, Mattia; Losi, Raffaele; Fantini, Fausto; Schüßler, Martin; Hartnagel, Hans Ludwig; Franchi, Secondo; Bosacchi, A.

In: Alta Frequenza Rivista Di Elettronica, Vol. 9, No. 5, 09.1997, p. 56-59.

Research output: Contribution to journalArticle

Borgarino, M, Losi, R, Fantini, F, Schüßler, M, Hartnagel, HL, Franchi, S & Bosacchi, A 1997, 'The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices', Alta Frequenza Rivista Di Elettronica, vol. 9, no. 5, pp. 56-59.
Borgarino M, Losi R, Fantini F, Schüßler M, Hartnagel HL, Franchi S et al. The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices. Alta Frequenza Rivista Di Elettronica. 1997 Sep;9(5):56-59.
Borgarino, Mattia ; Losi, Raffaele ; Fantini, Fausto ; Schüßler, Martin ; Hartnagel, Hans Ludwig ; Franchi, Secondo ; Bosacchi, A. / The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices. In: Alta Frequenza Rivista Di Elettronica. 1997 ; Vol. 9, No. 5. pp. 56-59.
@article{16d8a8a17d92484bbcddba524aa1486f,
title = "The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices",
abstract = "The impact of the base dopant level on the stability of Bedoped AlGaAs/GaAs HBTs is investigated by means of forward current stresses carried out at room temperature. The results show that the degradation mechanism is due to the Beryllium outdiffusion: the higher is the base dopant concentration, the larger the degradation.",
author = "Mattia Borgarino and Raffaele Losi and Fausto Fantini and Martin Sch{\"u}{\ss}ler and Hartnagel, {Hans Ludwig} and Secondo Franchi and A. Bosacchi",
year = "1997",
month = "9",
language = "English",
volume = "9",
pages = "56--59",
journal = "Alta Frequenza Rivista Di Elettronica",
issn = "1120-1908",
publisher = "Associazione Elettrotecnica ed Elettronica Italiana",
number = "5",

}

TY - JOUR

T1 - The effect of the base dopant concentration on the stability of Bedoped AlGaAs/GaAs HBTs devices

AU - Borgarino, Mattia

AU - Losi, Raffaele

AU - Fantini, Fausto

AU - Schüßler, Martin

AU - Hartnagel, Hans Ludwig

AU - Franchi, Secondo

AU - Bosacchi, A.

PY - 1997/9

Y1 - 1997/9

N2 - The impact of the base dopant level on the stability of Bedoped AlGaAs/GaAs HBTs is investigated by means of forward current stresses carried out at room temperature. The results show that the degradation mechanism is due to the Beryllium outdiffusion: the higher is the base dopant concentration, the larger the degradation.

AB - The impact of the base dopant level on the stability of Bedoped AlGaAs/GaAs HBTs is investigated by means of forward current stresses carried out at room temperature. The results show that the degradation mechanism is due to the Beryllium outdiffusion: the higher is the base dopant concentration, the larger the degradation.

UR - http://www.scopus.com/inward/record.url?scp=0031221033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031221033&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031221033

VL - 9

SP - 56

EP - 59

JO - Alta Frequenza Rivista Di Elettronica

JF - Alta Frequenza Rivista Di Elettronica

SN - 1120-1908

IS - 5

ER -