The effect of process parameters on the chemical structure of pulsed laser deposited carbon nitride films

I. Bertóti, T. Szörényi, F. Antoni, E. Fogarassy

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Results of a comparative XPS study on 26 carbon nitride samples of different chemical composition fabricated by ablating a graphite target with an ArF excimer laser in N2 atmosphere while systematically varying the pressure in the 1-100-Pa and the laser fluence in the 1.0-10-J cm-2 domains are reported. NIs core level spectra recorded on all samples are consistently fitted by four components at 398.2, 399.4, 400.7 and 402.1 eV, respectively. Changes in the relative abundance of the individual spectral components of the NIs lines as a function of laser fluence and nitrogen pressure are interpreted in terms of changes in the chemical environment around nitrogen atoms. When present in low concentration, nitrogen atoms prefer sites allowing pyramidal configuration. With increasing concentration more and more atoms form C-N=C type bonds, nevertheless, in all films the majority of the nitrogen atoms occupies pyramidal configurations.

Original languageEnglish
Pages (from-to)1157-1160
Number of pages4
JournalDiamond and Related Materials
Issue number3-6
Publication statusPublished - Mar 1 2002



  • Nitrides
  • Pulsed laser deposition
  • XPS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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