The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contacts

Erika Jároli, J. Gyulai, B. Pécz, R. Veresegyházy, G. Radnóczi, P. Barna

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Abstract

The effect of Xe ion treatment (700 keV, 1014Xe2+/cm2) on the interaction between Au(55 nm)/GaAs(100) was studied using RBS (Rutherford backscattering spectrometry) and TEM (transmission electron microscopy). Samples were annealed rapidly in UHV with a heating rate of 150°C/min while the evaporation of the volatile component (As) was monitored with a mass spectrometer. Taking the evaporation vs temperature curves into account, the samples were quenched from different temperatures. The equilibrium reaction was recently analyzed by Pécz et al. [J. Appl. Phys. 71 (1992) 3408]. In that work, on top of flat Au(Ga) solid solution grains a continuous layer of polycrystalline GaAs was observed. The purpose of the present work was to examine the role of As and of the created defects and to investigate the structure obtained by rapid heating.

Original languageEnglish
Pages (from-to)548-551
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume80-81
Issue numberPART 1
DOIs
Publication statusPublished - Jun 3 1993

Fingerprint

Ion bombardment
bombardment
Evaporation
evaporation
Defects
heating
defects
Rutherford backscattering spectroscopy
Mass spectrometers
Heating rate
Spectrometry
mass spectrometers
Solid solutions
backscattering
ions
solid solutions
Ions
Transmission electron microscopy
Heating
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "The effect of Xe ion treatment (700 keV, 1014Xe2+/cm2) on the interaction between Au(55 nm)/GaAs(100) was studied using RBS (Rutherford backscattering spectrometry) and TEM (transmission electron microscopy). Samples were annealed rapidly in UHV with a heating rate of 150°C/min while the evaporation of the volatile component (As) was monitored with a mass spectrometer. Taking the evaporation vs temperature curves into account, the samples were quenched from different temperatures. The equilibrium reaction was recently analyzed by P{\'e}cz et al. [J. Appl. Phys. 71 (1992) 3408]. In that work, on top of flat Au(Ga) solid solution grains a continuous layer of polycrystalline GaAs was observed. The purpose of the present work was to examine the role of As and of the created defects and to investigate the structure obtained by rapid heating.",
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T1 - The effect of defects caused by Xe ion bombardment on the structure of Au/GaAs contacts

AU - Jároli, Erika

AU - Gyulai, J.

AU - Pécz, B.

AU - Veresegyházy, R.

AU - Radnóczi, G.

AU - Barna, P.

PY - 1993/6/3

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AB - The effect of Xe ion treatment (700 keV, 1014Xe2+/cm2) on the interaction between Au(55 nm)/GaAs(100) was studied using RBS (Rutherford backscattering spectrometry) and TEM (transmission electron microscopy). Samples were annealed rapidly in UHV with a heating rate of 150°C/min while the evaporation of the volatile component (As) was monitored with a mass spectrometer. Taking the evaporation vs temperature curves into account, the samples were quenched from different temperatures. The equilibrium reaction was recently analyzed by Pécz et al. [J. Appl. Phys. 71 (1992) 3408]. In that work, on top of flat Au(Ga) solid solution grains a continuous layer of polycrystalline GaAs was observed. The purpose of the present work was to examine the role of As and of the created defects and to investigate the structure obtained by rapid heating.

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