The chemical structure of carbon nitride films fabricated by pulsed plasma-assisted chemical vapor deposition

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Abstract

Carbon nitride films have been grown by a novel technique in which high power activation of the precursor gases is achieved by plasma generation with pulses of tens of nanoseconds lifetime. The effect of the substrate temperature on the chemical composition of films deposited from 13 sccm CH4 + 39 sccm N2 at a total pressure of 300 Pa is followed by X-ray photoelectron spectroscopy (XPS). N/C ratios between 0.33 and 0.37 characterize the material obtained at room temperature. Though the N content of the films steeply decreases with increasing substrate temperature, even those grown above 800 °C do contain a few at.%. The changes in the relative abundance of the individual spectral components of the C1s and N1s lines are interpreted in terms of changes in the chemical environment of the nitrogen and carbon atoms. Comparison of the results of the XPS analysis with pieces of information on surface morphology and local composition of the films derived from parallel SEM and X-ray microanalyses suggests that the deposits consist of a great variety of carbon microstructures of different shape and dimension embedded in a rather thin layer of higher nitrogen content.

Original languageEnglish
Pages (from-to)271-274
Number of pages4
JournalSurface and Coatings Technology
Volume180-181
DOIs
Publication statusPublished - Mar 1 2004

Fingerprint

carbon nitrides
Carbon nitride
Chemical vapor deposition
vapor deposition
Plasmas
Nitrogen
Carbon
X ray photoelectron spectroscopy
photoelectron spectroscopy
plasma generators
x rays
carbon
Microanalysis
Substrates
Chemical analysis
microanalysis
nitrogen atoms
Temperature
Surface morphology
chemical composition

Keywords

  • Carbon nitride
  • Chemical structure
  • Chemical vapor deposition
  • X-Ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

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title = "The chemical structure of carbon nitride films fabricated by pulsed plasma-assisted chemical vapor deposition",
abstract = "Carbon nitride films have been grown by a novel technique in which high power activation of the precursor gases is achieved by plasma generation with pulses of tens of nanoseconds lifetime. The effect of the substrate temperature on the chemical composition of films deposited from 13 sccm CH4 + 39 sccm N2 at a total pressure of 300 Pa is followed by X-ray photoelectron spectroscopy (XPS). N/C ratios between 0.33 and 0.37 characterize the material obtained at room temperature. Though the N content of the films steeply decreases with increasing substrate temperature, even those grown above 800 °C do contain a few at.{\%}. The changes in the relative abundance of the individual spectral components of the C1s and N1s lines are interpreted in terms of changes in the chemical environment of the nitrogen and carbon atoms. Comparison of the results of the XPS analysis with pieces of information on surface morphology and local composition of the films derived from parallel SEM and X-ray microanalyses suggests that the deposits consist of a great variety of carbon microstructures of different shape and dimension embedded in a rather thin layer of higher nitrogen content.",
keywords = "Carbon nitride, Chemical structure, Chemical vapor deposition, X-Ray photoelectron spectroscopy",
author = "Pap, {G. J.} and I. Bert{\'o}ti and T. Sz{\"o}r{\'e}nyi and P. Heszler",
year = "2004",
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T1 - The chemical structure of carbon nitride films fabricated by pulsed plasma-assisted chemical vapor deposition

AU - Pap, G. J.

AU - Bertóti, I.

AU - Szörényi, T.

AU - Heszler, P.

PY - 2004/3/1

Y1 - 2004/3/1

N2 - Carbon nitride films have been grown by a novel technique in which high power activation of the precursor gases is achieved by plasma generation with pulses of tens of nanoseconds lifetime. The effect of the substrate temperature on the chemical composition of films deposited from 13 sccm CH4 + 39 sccm N2 at a total pressure of 300 Pa is followed by X-ray photoelectron spectroscopy (XPS). N/C ratios between 0.33 and 0.37 characterize the material obtained at room temperature. Though the N content of the films steeply decreases with increasing substrate temperature, even those grown above 800 °C do contain a few at.%. The changes in the relative abundance of the individual spectral components of the C1s and N1s lines are interpreted in terms of changes in the chemical environment of the nitrogen and carbon atoms. Comparison of the results of the XPS analysis with pieces of information on surface morphology and local composition of the films derived from parallel SEM and X-ray microanalyses suggests that the deposits consist of a great variety of carbon microstructures of different shape and dimension embedded in a rather thin layer of higher nitrogen content.

AB - Carbon nitride films have been grown by a novel technique in which high power activation of the precursor gases is achieved by plasma generation with pulses of tens of nanoseconds lifetime. The effect of the substrate temperature on the chemical composition of films deposited from 13 sccm CH4 + 39 sccm N2 at a total pressure of 300 Pa is followed by X-ray photoelectron spectroscopy (XPS). N/C ratios between 0.33 and 0.37 characterize the material obtained at room temperature. Though the N content of the films steeply decreases with increasing substrate temperature, even those grown above 800 °C do contain a few at.%. The changes in the relative abundance of the individual spectral components of the C1s and N1s lines are interpreted in terms of changes in the chemical environment of the nitrogen and carbon atoms. Comparison of the results of the XPS analysis with pieces of information on surface morphology and local composition of the films derived from parallel SEM and X-ray microanalyses suggests that the deposits consist of a great variety of carbon microstructures of different shape and dimension embedded in a rather thin layer of higher nitrogen content.

KW - Carbon nitride

KW - Chemical structure

KW - Chemical vapor deposition

KW - X-Ray photoelectron spectroscopy

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