The as-grown SiC(0001) surface as observed by reflection electron microscopy

T. Marek, J. Heindl, H. P. Strunk, R. Eckstein, St G. Müller, D. Hofmann

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Reflection electron microscopy (HEM), capable of imaging surfaces in high resolution, reveals that the risers and treads in the terrace growth surfaces of vapor grown SiC(0001) bulk crystals are characterized on a microscopic scale by growth steps. At the risers microscopic growth occurs by the "step flow mode'. At the treads, growth occurs by island formation and by operation of growth spirals.

Original languageEnglish
Pages (from-to)1001-1005
Number of pages5
JournalCrystal Research and Technology
Volume31
Issue number8
DOIs
Publication statusPublished - 1996

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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