Hydrogen depth-profiles in a-Si:H as well as the ratio of N to Si in a-SixN1 - x:H matrixes were determined simultaneously by nondestructive, fast methods namely elastic recoil detection (ERD) and Rutherford backscattering (RBS) spectrometry. Choosing properly the geometrical arrangement of the experiment a depth resolution of better than 25 nm for H content is found. The maximum probing depth which can be achieved by 3 MeV 4He+ beam applied is more than 1 μm. The ratio of N to Si is calculated by computer simulation of the spectrum taken by RBS analysis.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry