The application of ERD and RBS techniques for determining h depth profiles and impurity contents in a-Si:H layers

Gy Zentai, F. Pászti, A. Manuaba

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Abstract

Hydrogen depth-profiles in a-Si:H as well as the ratio of N to Si in a-SixN1 - x:H matrixes were determined simultaneously by nondestructive, fast methods namely elastic recoil detection (ERD) and Rutherford backscattering (RBS) spectrometry. Choosing properly the geometrical arrangement of the experiment a depth resolution of better than 25 nm for H content is found. The maximum probing depth which can be achieved by 3 MeV 4He+ beam applied is more than 1 μm. The ratio of N to Si is calculated by computer simulation of the spectrum taken by RBS analysis.

Original languageEnglish
Pages (from-to)163-166
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume90
Issue number1-3
DOIs
Publication statusPublished - Feb 1987

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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