TG study on the reaction of γ-allumina with SiCl4

I. Bertóti, I. S. Pap, G. Mink, F. Réti, T. Székely

Research output: Contribution to journalArticle

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Abstract

The reaction of γ-alumina with gaseous SiCl4 was investigated by thermogravimetry in the temperature range 300-1140 K, and also by bulk (AAS) and surface (XPS) analyses. The reversible mass gain observed at low temperatures is caused by physisorption, while the irreversible one, by the reaction of OH-groups and/or by a strong chemisorption. Above 700 K a new process, the rearrangement of the reacted surface followed by the volatilization of AlCl3, occurs. As a result, the built-in silicon finally forms an approximate monolayer on the γ-alumina surface.

Original languageEnglish
Pages (from-to)175-179
Number of pages5
JournalThermochimica Acta
Volume107
Issue numberC
DOIs
Publication statusPublished - Oct 15 1986

Fingerprint

Aluminum Oxide
Alumina
aluminum oxides
Physisorption
vaporizing
Silicon
Chemisorption
thermogravimetry
Vaporization
chemisorption
Thermogravimetric analysis
Monolayers
X ray photoelectron spectroscopy
Temperature
silicon
temperature
aluminum chloride
hydroxide ion

ASJC Scopus subject areas

  • Chemistry (miscellaneous)
  • Physical and Theoretical Chemistry

Cite this

TG study on the reaction of γ-allumina with SiCl4 . / Bertóti, I.; Pap, I. S.; Mink, G.; Réti, F.; Székely, T.

In: Thermochimica Acta, Vol. 107, No. C, 15.10.1986, p. 175-179.

Research output: Contribution to journalArticle

Bertóti, I, Pap, IS, Mink, G, Réti, F & Székely, T 1986, 'TG study on the reaction of γ-allumina with SiCl4 ', Thermochimica Acta, vol. 107, no. C, pp. 175-179. https://doi.org/10.1016/0040-6031(86)85045-6
Bertóti, I. ; Pap, I. S. ; Mink, G. ; Réti, F. ; Székely, T. / TG study on the reaction of γ-allumina with SiCl4 In: Thermochimica Acta. 1986 ; Vol. 107, No. C. pp. 175-179.
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