TG study on the reaction of γ-allumina with SiCl4

I. Bertóti, I. S. Pap, G. Mink, F. Réti, T. Székely

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The reaction of γ-alumina with gaseous SiCl4 was investigated by thermogravimetry in the temperature range 300-1140 K, and also by bulk (AAS) and surface (XPS) analyses. The reversible mass gain observed at low temperatures is caused by physisorption, while the irreversible one, by the reaction of OH-groups and/or by a strong chemisorption. Above 700 K a new process, the rearrangement of the reacted surface followed by the volatilization of AlCl3, occurs. As a result, the built-in silicon finally forms an approximate monolayer on the γ-alumina surface.

Original languageEnglish
Pages (from-to)175-179
Number of pages5
JournalThermochimica Acta
Issue numberC
Publication statusPublished - Oct 15 1986


ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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