Tetrahedral-site vs hexagonal-site self-interstitial in silicon

P. Boguslawski, G. Papp, A. Baldereschi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The self-interstitial in silicon is studied as function of its position in between the tetrahedral and the hexagonal sites with the large-unit-cell pseudopotential method. The energy level scheme of the impurity stems from the interaction between the atomic orbitals of the interstitial and nearest-neighbour host crystal bonding orbitals. The striking changes in electronic structure along the path are not due to a variation of the impurity potential but rather to that of the host crystal environment.

Original languageEnglish
Pages (from-to)155-158
Number of pages4
JournalSolid State Communications
Volume52
Issue number2
DOIs
Publication statusPublished - Oct 1984

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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