Test of dielectric-response model for energy and angular dependence of plasmon excitations in core-level photoemission

F. Yubero, L. Kover, W. Drube, Th Eickhoff, S. Tougaard

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We compare experimental measurements of the loss structure appearing in the Si 2p and Si 1s photoemission lines for a large range of emission angles (between 0° and 82°) and kinetic energies (125-3660 eV) with calculations derived within a semiclassical dielectric-response formalism [A. Cohen Simonsen, F. Yubero, S. Tougaard, Phys. Rev. B 56 (1997) 1612]. It is found that this semi-classical dielectric description of the energy-loss processes reproduces the relative intensity of surface to bulk energy losses appearing in the lower kinetic energy side of the main photoelectron peaks as well as the relative intensity of the losses with respect to the zero-loss peak. The absolute ratio of intensity of the loss structure to the zero-loss is ∼25-35% lower compared to experiment using self-consistent inelastic mean free paths in the analysis.

Original languageEnglish
Pages (from-to)1-7
Number of pages7
JournalSurface Science
Volume592
Issue number1-3
DOIs
Publication statusPublished - Nov 1 2005

Keywords

  • Dielectric phenomena
  • Electron-solid scattering and transmission-inelastic
  • Photoelectron spectroscopy
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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