Temperature dependent in situ doping of ALD ZnO

Zs Baji, Z. Lábadi, Z. Horváth, M. Fried, B. Szentpáli, I. Bársony

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

This study on ALD grown ZnO layers is aimed at the systematic study of the effect of incorporation of different Al contents on the properties of the layers. An alternate precursor pulse method was used for layer deposition. Optimal doping was achieved at 210 °C at 2 at% Al content. A relationship between crystalline morphology versus temperature and aluminium incorporation was established.

Original languageEnglish
Pages (from-to)93-99
Number of pages7
JournalJournal of Thermal Analysis and Calorimetry
Volume105
Issue number1
DOIs
Publication statusPublished - Jul 2011

Fingerprint

Aluminum
Doping (additives)
Crystalline materials
Temperature
temperature
aluminum
pulses

Keywords

  • Aluminium doping
  • Atomic layer deposition
  • Transparent conductive oxide
  • ZnO

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics

Cite this

Temperature dependent in situ doping of ALD ZnO. / Baji, Zs; Lábadi, Z.; Horváth, Z.; Fried, M.; Szentpáli, B.; Bársony, I.

In: Journal of Thermal Analysis and Calorimetry, Vol. 105, No. 1, 07.2011, p. 93-99.

Research output: Contribution to journalArticle

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