Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Enise Ayyildiz, Hidayet Cetin, Z. Horváth

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E00 = 9.8 meV, Schottky barrier height at zero bias Φb0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm-2 K-2.

Original languageEnglish
Pages (from-to)1153-1158
Number of pages6
JournalApplied Surface Science
Volume252
Issue number4
DOIs
Publication statusPublished - Nov 15 2005

Fingerprint

Schottky diodes
Diodes
Thermionic emission
capacitance-voltage characteristics
thermionic emission
Electric potential
Field emission
field emission
Capacitance
Hole concentration
Temperature
temperature dependence
temperature
electric potential
Metals
Semiconductor materials
anomalies
evaluation
coefficients
metals

Keywords

  • Current-voltage and capacitance-voltage characteristics
  • Schottky junctions
  • Thermionic-field emission

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes. / Ayyildiz, Enise; Cetin, Hidayet; Horváth, Z.

In: Applied Surface Science, Vol. 252, No. 4, 15.11.2005, p. 1153-1158.

Research output: Contribution to journalArticle

Ayyildiz, Enise ; Cetin, Hidayet ; Horváth, Z. / Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes. In: Applied Surface Science. 2005 ; Vol. 252, No. 4. pp. 1153-1158.
@article{018ae0bcb9e04a2ca802b3397630135d,
title = "Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes",
abstract = "Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E00 = 9.8 meV, Schottky barrier height at zero bias Φb0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm-2 K-2.",
keywords = "Current-voltage and capacitance-voltage characteristics, Schottky junctions, Thermionic-field emission",
author = "Enise Ayyildiz and Hidayet Cetin and Z. Horv{\'a}th",
year = "2005",
month = "11",
day = "15",
doi = "10.1016/j.apsusc.2005.02.044",
language = "English",
volume = "252",
pages = "1153--1158",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

AU - Ayyildiz, Enise

AU - Cetin, Hidayet

AU - Horváth, Z.

PY - 2005/11/15

Y1 - 2005/11/15

N2 - Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E00 = 9.8 meV, Schottky barrier height at zero bias Φb0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm-2 K-2.

AB - Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E00 = 9.8 meV, Schottky barrier height at zero bias Φb0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm-2 K-2.

KW - Current-voltage and capacitance-voltage characteristics

KW - Schottky junctions

KW - Thermionic-field emission

UR - http://www.scopus.com/inward/record.url?scp=26444519781&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=26444519781&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2005.02.044

DO - 10.1016/j.apsusc.2005.02.044

M3 - Article

AN - SCOPUS:26444519781

VL - 252

SP - 1153

EP - 1158

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 4

ER -