Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

Enise Ayyildiz, Hidayet Cetin, Zs J. Horváth

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E 00 = 9.8 meV, Schottky barrier height at zero bias Φ b0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm -2 K -2 .

Original languageEnglish
Pages (from-to)1153-1158
Number of pages6
JournalApplied Surface Science
Volume252
Issue number4
DOIs
Publication statusPublished - Nov 15 2005

Keywords

  • Current-voltage and capacitance-voltage characteristics
  • Schottky junctions
  • Thermionic-field emission

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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