Temperature dependent electrical characteristics of silicide/silicon junctions

Z. Horváth, D. Donoval, G. Pető, G. Molnár, Vo Van Tuyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theory depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSi/Si junctions, while it is due to the lateral inhomogeneity of the junction in the GdCoSi/Si junctions.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-42
Number of pages4
ISBN (Print)0780359399, 9780780359390
DOIs
Publication statusPublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: Oct 16 2000Oct 18 2000

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

Fingerprint

Thermionic emission
Silicon
Field emission
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horváth, Z., Donoval, D., Pető, G., Molnár, G., & Van Tuyen, V. (2000). Temperature dependent electrical characteristics of silicide/silicon junctions. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 39-42). [889448] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889448

Temperature dependent electrical characteristics of silicide/silicon junctions. / Horváth, Z.; Donoval, D.; Pető, G.; Molnár, G.; Van Tuyen, Vo.

ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2000. p. 39-42 889448.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Horváth, Z, Donoval, D, Pető, G, Molnár, G & Van Tuyen, V 2000, Temperature dependent electrical characteristics of silicide/silicon junctions. in ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems., 889448, Institute of Electrical and Electronics Engineers Inc., pp. 39-42, 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003, Smolenice, Slovakia, 10/16/00. https://doi.org/10.1109/ASDAM.2000.889448
Horváth Z, Donoval D, Pető G, Molnár G, Van Tuyen V. Temperature dependent electrical characteristics of silicide/silicon junctions. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc. 2000. p. 39-42. 889448 https://doi.org/10.1109/ASDAM.2000.889448
Horváth, Z. ; Donoval, D. ; Pető, G. ; Molnár, G. ; Van Tuyen, Vo. / Temperature dependent electrical characteristics of silicide/silicon junctions. ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 39-42
@inproceedings{bdace77f265f48dd98eae49104eaa613,
title = "Temperature dependent electrical characteristics of silicide/silicon junctions",
abstract = "MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theory depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSi/Si junctions, while it is due to the lateral inhomogeneity of the junction in the GdCoSi/Si junctions.",
author = "Z. Horv{\'a}th and D. Donoval and G. Pető and G. Moln{\'a}r and {Van Tuyen}, Vo",
year = "2000",
doi = "10.1109/ASDAM.2000.889448",
language = "English",
isbn = "0780359399",
pages = "39--42",
booktitle = "ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Temperature dependent electrical characteristics of silicide/silicon junctions

AU - Horváth, Z.

AU - Donoval, D.

AU - Pető, G.

AU - Molnár, G.

AU - Van Tuyen, Vo

PY - 2000

Y1 - 2000

N2 - MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theory depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSi/Si junctions, while it is due to the lateral inhomogeneity of the junction in the GdCoSi/Si junctions.

AB - MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theory depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSi/Si junctions, while it is due to the lateral inhomogeneity of the junction in the GdCoSi/Si junctions.

UR - http://www.scopus.com/inward/record.url?scp=84951974158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84951974158&partnerID=8YFLogxK

U2 - 10.1109/ASDAM.2000.889448

DO - 10.1109/ASDAM.2000.889448

M3 - Conference contribution

AN - SCOPUS:84951974158

SN - 0780359399

SN - 9780780359390

SP - 39

EP - 42

BT - ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems

PB - Institute of Electrical and Electronics Engineers Inc.

ER -