Temperature dependent electrical characteristics of silicide/silicon junctions

Z. Horváth, D. Donoval, G. Pető, G. Molnár, Vo Van Tuyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

MoSi/Si and GdCoSi/Si junctions are studied by I-V measurements in the temperature range of 80-360 K. The ideality factor and apparent barrier height evaluated for the thermionic emission theory depends on temperature. It is shown that this behaviour is due to the domination of the current by an anomalous high level of thermionic-field emission in the MoSi/Si junctions, while it is due to the lateral inhomogeneity of the junction in the GdCoSi/Si junctions.

Original languageEnglish
Title of host publicationASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages39-42
Number of pages4
ISBN (Print)0780359399, 9780780359390
DOIs
Publication statusPublished - 2000
Event3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003 - Smolenice, Slovakia
Duration: Oct 16 2000Oct 18 2000

Other

Other3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, ASDAM 2003
CountrySlovakia
CitySmolenice
Period10/16/0010/18/00

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Horváth, Z., Donoval, D., Pető, G., Molnár, G., & Van Tuyen, V. (2000). Temperature dependent electrical characteristics of silicide/silicon junctions. In ASDAM 2000 - Conference Proceedings: 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems (pp. 39-42). [889448] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASDAM.2000.889448