Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures

M. Gurioli, A. Vinattieri, M. Colocci, C. Deparis, J. Massies, G. Neu, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

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Abstract

We report an experimental study of the photoluminescence (PL) properties, after both picosecond and continuous-wave excitation, of GaAs/AlxGa1-xAs quantum-well structures. The comparison between the PL decay time and the PL integrated intensity allows us to determine the temperature dependence of both the radiative and the nonradiative time constants. We find that the nonradiative processes play an important role and become dominant for T100 K. The radiative time constant turns out to be definitely higher than the measured PL decay time and increases by several orders of magnitude as the temperature is raised from T=4 K to room temperature. The experimental results are finally compared with the theories existing in the literature.

Original languageEnglish
Pages (from-to)3115-3124
Number of pages10
JournalPhysical Review B
Volume44
Issue number7
DOIs
Publication statusPublished - 1991

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radiative recombination
Semiconductor quantum wells
Photoluminescence
quantum wells
photoluminescence
temperature dependence
time constant
Temperature
wave excitation
decay
continuous radiation
gallium arsenide
room temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Gurioli, M., Vinattieri, A., Colocci, M., Deparis, C., Massies, J., Neu, G., ... Franchi, S. (1991). Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures. Physical Review B, 44(7), 3115-3124. https://doi.org/10.1103/PhysRevB.44.3115

Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures. / Gurioli, M.; Vinattieri, A.; Colocci, M.; Deparis, C.; Massies, J.; Neu, G.; Bosacchi, A.; Franchi, S.

In: Physical Review B, Vol. 44, No. 7, 1991, p. 3115-3124.

Research output: Contribution to journalArticle

Gurioli, M, Vinattieri, A, Colocci, M, Deparis, C, Massies, J, Neu, G, Bosacchi, A & Franchi, S 1991, 'Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures', Physical Review B, vol. 44, no. 7, pp. 3115-3124. https://doi.org/10.1103/PhysRevB.44.3115
Gurioli, M. ; Vinattieri, A. ; Colocci, M. ; Deparis, C. ; Massies, J. ; Neu, G. ; Bosacchi, A. ; Franchi, S. / Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1-xAs quantum-well structures. In: Physical Review B. 1991 ; Vol. 44, No. 7. pp. 3115-3124.
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