Temperature dependence of the photorefractive effect in undoped Bi 12GeO20

I. Földvári, Joel J. Martin, Charles A. Hunt, Richard C. Powell, Roger J. Reeves, A. Péter

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The low-temperature four-wave mixing (FWM) photorefractive response was investigated in undoped Bi12GeO20 (BGO) crystals. The FWM diffraction efficiency increases as the temperature is lowered until a local maximum is reached after which it decreases. The temperature where the maximum intensity FWM signal occurs depends on the write conditions. A model assuming both electron and hole gratings was used to describe the observations. Two shallow trap levels of 0.015 and 0.08 eV were identified as being responsible for the fast decay (

Original languageEnglish
Pages (from-to)783-789
Number of pages7
JournalJournal of Applied Physics
Volume74
Issue number2
DOIs
Publication statusPublished - 1993

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four-wave mixing
temperature dependence
traps
gratings
temperature
decay
diffraction
crystals
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Temperature dependence of the photorefractive effect in undoped Bi 12GeO20. / Földvári, I.; Martin, Joel J.; Hunt, Charles A.; Powell, Richard C.; Reeves, Roger J.; Péter, A.

In: Journal of Applied Physics, Vol. 74, No. 2, 1993, p. 783-789.

Research output: Contribution to journalArticle

Földvári, I. ; Martin, Joel J. ; Hunt, Charles A. ; Powell, Richard C. ; Reeves, Roger J. ; Péter, A. / Temperature dependence of the photorefractive effect in undoped Bi 12GeO20. In: Journal of Applied Physics. 1993 ; Vol. 74, No. 2. pp. 783-789.
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