Temperature dependence of the carrier mobility in Ag2Se layers grown on NaCl and SiOx substrates

K. Somogyi, P. Panine, G. Sáfrán

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Electrical propertics of monocrystalline and polycrystalline silver selenide thin films have been investigated in the temperature range of -196 to +150°C. Epitaxial and randomly oriented Ag2Se layers have been grown by vacuum deposition on NaCl and SiOx substrates, respectively. Special attention was paid to changes of the "mobility" (n-type conductivity) with temperature including the polymorphic phase transformation region (from 100 to 140 °C). The measurements have been performed in both directions of the temperature variation and a difference was found in the temperature of the phase transformation (hysteresis) depending upon the heating or cooling down conditions. A typical mobility of about 1000 cm2/Vs was found at room temperature. Shape and differences in the slopes of the mobility variations have been discussed.

Original languageEnglish
Pages (from-to)243-255
Number of pages13
JournalActa Physica Hungarica
Volume74
Issue number3
DOIs
Publication statusPublished - Jun 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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