Temperature change induced degradation of SiC MOSFET devices

Zoltan Sarkany, Weikun He, M. Rencz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Besides the electric parameters of a semiconductor device, the lifetime is a key measure of quality. Overheating is one of the top failure causes in electronic systems. In this paper, a power cycling experiment done on silicon carbide (SiC) MOSFET devices is presented. The experimental setup and measurement conditions are described in detail and a discussion is given on the importance of the electrical setup and the control strategy. The data collected during the power cycling are analyzed, and the primary failure modes are identified. The high-resolution monitoring of the voltage drop on the device, in combination with other monitored parameters, enables the detection of a bond wire lift-off or breakage. With the help of the thermal transient measurement and structure function analysis, the structural changes in the heat flow path can also be identified. Finally, the results of the electric measurements are compared and verified by scanning acoustic microscopy tests.

Original languageEnglish
Title of host publicationProceedings of the 15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1572-1579
Number of pages8
ISBN (Electronic)9781467381215
DOIs
Publication statusPublished - Jul 20 2016
Event15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016 - Las Vegas, United States
Duration: May 31 2016Jun 3 2016

Other

Other15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016
CountryUnited States
CityLas Vegas
Period5/31/166/3/16

Keywords

  • Metal-oxide-semiconductor field-effect transistor (MOSFET)
  • power cycling
  • reliability testing
  • silicon carbide
  • structure function
  • thermal transient testing

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Mechanics of Materials

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  • Cite this

    Sarkany, Z., He, W., & Rencz, M. (2016). Temperature change induced degradation of SiC MOSFET devices. In Proceedings of the 15th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2016 (pp. 1572-1579). [7517736] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITHERM.2016.7517736