TEM study of Ni and Ni2Si ohmic contacts to SiC

B. Pécz, G. Radnóczi, S. Cassette, C. Brylinski, C. Arnodo, O. Noblanc

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Abstract

The structure of Ni and Si/Ni contacts to SiC was studied by transmission electron microscopy. Annealed Ni/SiC contacts showed ohmic behaviour, but Ni proved to be reactive with SiC resulting in the formation of nickel suicide together with the formation of a high number of voids. Deposition and annealing of Si/Ni multilayer contacts resulted in a void free Ni2Si contact 0layer on SiC, while also exhibiting low contact resistivity.

Original languageEnglish
Pages (from-to)1428-1431
Number of pages4
JournalDiamond and Related Materials
Volume6
Issue number10
DOIs
Publication statusPublished - Aug 1997

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Keywords

  • Electron microscopy
  • Ohmic contacts
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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