TEM investigation of Si implanted natural diamond

B. Pécz, Á Barna, V. Heera, F. Fontaine, W. Skorupa

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Natural diamond samples have been implanted by Si ions at 900°C at two different doses (3* 1017 and 1* 1018 ions/cm2). Layered structure is formed in the lower dose case, which is composed of thin stripes of epitaxial SiC and diamond. The higher dose implantation results in the formation of large, crystalline SiC grains, but leads to the amorphization of the diamond lattice in the top region.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalMaterials Science Forum
Volume353-356
Publication statusPublished - Jan 1 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Pécz, B., Barna, Á., Heera, V., Fontaine, F., & Skorupa, W. (2001). TEM investigation of Si implanted natural diamond. Materials Science Forum, 353-356, 199-202.