TEM characterization of epitaxial 3C-SiC grains on Si (100) and Si (111)

Zs Makkai, B. Pécz, Gy Vida, P. Deák

Research output: Contribution to journalArticle

Abstract

SiC grains have been formed in Si under a SiO2 capping layer by annealing in a CO atmosphere. The method provides cubic SiC grains which are epitaxial to the silicon substrate on both (100) and (111) oriented Si wafers. Formation of voids in silicon was completely avoided when annealing was carried out in the temperature range of 1100°C-1190°C. The surface area covered by SiC is determined for samples annealed for different times (from 3 to 102 hours) by transmission electron microscopy on plan-view samples.

Original languageEnglish
Pages (from-to)265-268
Number of pages4
JournalDesign and Nature
Volume6
Publication statusPublished - 2004

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Annealing
Transmission electron microscopy
Silicon
Substrates
Temperature

ASJC Scopus subject areas

  • Engineering(all)

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TEM characterization of epitaxial 3C-SiC grains on Si (100) and Si (111). / Makkai, Zs; Pécz, B.; Vida, Gy; Deák, P.

In: Design and Nature, Vol. 6, 2004, p. 265-268.

Research output: Contribution to journalArticle

Makkai, Zs ; Pécz, B. ; Vida, Gy ; Deák, P. / TEM characterization of epitaxial 3C-SiC grains on Si (100) and Si (111). In: Design and Nature. 2004 ; Vol. 6. pp. 265-268.
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