TEM and PEELS characterization of diamond films grown on Si substrates

M. Avalos-Borja, G. A. Hirata, O. Contreras, X. G. Ning, A. Duarte-Moller, A. Barna

Research output: Contribution to journalArticle

8 Citations (Scopus)


A detailed cross-sectional analysis at the interface of a polycrystalline diamond film and a crystalline silicon substrate was performed using high resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Using the method described here, we can produce diamond films on non-scratched Si substrates by hot filament CVD (with the help of a SiC buffer layer). The size of the particles produced is in the range from 0.5 to 1.0 μm. An orientation relationship between the diamond particles and the SiC buffer layer is also found. Finally, it seems clear that a K-edge EELS spectrum is sufficient to distinguish amorphous carbon, graphite or diamond.

Original languageEnglish
Pages (from-to)1249-1253
Number of pages5
JournalDiamond and Related Materials
Issue number11
Publication statusPublished - Nov 1996


  • Diamond
  • HF-CVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'TEM and PEELS characterization of diamond films grown on Si substrates'. Together they form a unique fingerprint.

  • Cite this

    Avalos-Borja, M., Hirata, G. A., Contreras, O., Ning, X. G., Duarte-Moller, A., & Barna, A. (1996). TEM and PEELS characterization of diamond films grown on Si substrates. Diamond and Related Materials, 5(11), 1249-1253. https://doi.org/10.1016/0925-9635(96)00556-0