A detailed cross-sectional analysis at the interface of a polycrystalline diamond film and a crystalline silicon substrate was performed using high resolution electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Using the method described here, we can produce diamond films on non-scratched Si substrates by hot filament CVD (with the help of a SiC buffer layer). The size of the particles produced is in the range from 0.5 to 1.0 μm. An orientation relationship between the diamond particles and the SiC buffer layer is also found. Finally, it seems clear that a K-edge EELS spectrum is sufficient to distinguish amorphous carbon, graphite or diamond.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering