Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

C. Marques, N. Franco, L. C. Alves, R. C. da Silva, E. Alves, G. Sáfrán, C. J. McHargue

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

Original languageEnglish
Pages (from-to)515-518
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume257
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Apr 2007

Fingerprint

Aluminum Oxide
Sapphire
Ion implantation
Nanocrystals
ion implantation
nanocrystals
sapphire
Vacuum
Annealing
vacuum
annealing
Precipitates
precipitates
synthesis
voids
fluence
Nanoparticles
Transmission electron microscopy
nanoparticles
transmission electron microscopy

Keywords

  • IBIL
  • Ion implantation
  • Nanoparticles
  • RBS-C
  • Sapphire
  • Semiconductors

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing. / Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Sáfrán, G.; McHargue, C. J.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 257, No. 1-2 SPEC. ISS., 04.2007, p. 515-518.

Research output: Contribution to journalArticle

Marques, C. ; Franco, N. ; Alves, L. C. ; da Silva, R. C. ; Alves, E. ; Sáfrán, G. ; McHargue, C. J. / Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2007 ; Vol. 257, No. 1-2 SPEC. ISS. pp. 515-518.
@article{ba847a67b8394af597a41ed9705e0142,
title = "Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing",
abstract = "The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.",
keywords = "IBIL, Ion implantation, Nanoparticles, RBS-C, Sapphire, Semiconductors",
author = "C. Marques and N. Franco and Alves, {L. C.} and {da Silva}, {R. C.} and E. Alves and G. S{\'a}fr{\'a}n and McHargue, {C. J.}",
year = "2007",
month = "4",
doi = "10.1016/j.nimb.2007.01.123",
language = "English",
volume = "257",
pages = "515--518",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

AU - Marques, C.

AU - Franco, N.

AU - Alves, L. C.

AU - da Silva, R. C.

AU - Alves, E.

AU - Sáfrán, G.

AU - McHargue, C. J.

PY - 2007/4

Y1 - 2007/4

N2 - The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

AB - The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

KW - IBIL

KW - Ion implantation

KW - Nanoparticles

KW - RBS-C

KW - Sapphire

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=33947640943&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947640943&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2007.01.123

DO - 10.1016/j.nimb.2007.01.123

M3 - Article

AN - SCOPUS:33947640943

VL - 257

SP - 515

EP - 518

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2 SPEC. ISS.

ER -