Synthesis of metal-nitride films by pulsed laser deposition methods

L. Fabian, L. Nanai, M. Martino, A. Luches, I. N. Mihailescu

Research output: Contribution to journalConference article

Abstract

Pulsed Laser Deposition (ablation-deposition) method (PLD) is widely used nowadays to produce smooth, homogeneous thin films on solid (semiconductors) surfaces for microelectronic's purpose. Different metal-nitride films as well as nitrides of W, V, Ta, Ni, Co, Pb have been produced in NH3 and N2 atmosphere of a few (10-6 mbar) on Si surfaces with orientation 〈100〉. In the reaction chamber the pulses of excimer laser (λ = 308 nm, τFWHM = 25 ns, repetition rate f = 10 Hz, number of pulses a few thousands) at fluence of 5.8 J/cm2 (I = 0.19 GW/cm2) were directed at angle of incidence of 45° to the metallic sheet placed at distance 4.0 cm to the Si substrate. The metallic target was rotated at ≈3 Hz. Different surface analyzing methods revealed that smooth, homogeneous thin film of the thickness of 20-100 nm were grown on the substrate surface. The chemical composition of the layers varied of metal-silicides to metal-nitrides. In some cases the appearance of carbon and oxygen consisting mixtures such as VNCO, N13Si9O1.5C6 and WN were observed. The film structures might be considered mostly amorphous (Pb, W) according to the data of GR-XRD measurements.

Original languageEnglish
Pages (from-to)317-322
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4070
Publication statusPublished - Jan 1 2000
EventALT '99 International Conference on 'Advanced Laser Technologies - Potenza-Lecce, Italy
Duration: Sep 20 1999Sep 24 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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