SYNTHESIS OF INDIUM SELENIDE WITH PULSED RUBY LASER.

T. Szörényi, J. Kovacs, E. Szil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Laser synthesis is a promising new technique for producing compound semiconductor films. It is shown that 40 ns pulses of incident energy above 20. 5 mJ at 694 nm are sufficient for synthesizing indium selenide thin films from the components.

Original languageEnglish
Title of host publicationRevue roumaine de physique
Pages1079-1080
Number of pages2
Volume31
Edition9-10
Publication statusPublished - 1986

Fingerprint

Ruby
Indium
Semiconductor materials
Thin films
Lasers

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Szörényi, T., Kovacs, J., & Szil, E. (1986). SYNTHESIS OF INDIUM SELENIDE WITH PULSED RUBY LASER. In Revue roumaine de physique (9-10 ed., Vol. 31, pp. 1079-1080)

SYNTHESIS OF INDIUM SELENIDE WITH PULSED RUBY LASER. / Szörényi, T.; Kovacs, J.; Szil, E.

Revue roumaine de physique. Vol. 31 9-10. ed. 1986. p. 1079-1080.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Szörényi, T, Kovacs, J & Szil, E 1986, SYNTHESIS OF INDIUM SELENIDE WITH PULSED RUBY LASER. in Revue roumaine de physique. 9-10 edn, vol. 31, pp. 1079-1080.
Szörényi T, Kovacs J, Szil E. SYNTHESIS OF INDIUM SELENIDE WITH PULSED RUBY LASER. In Revue roumaine de physique. 9-10 ed. Vol. 31. 1986. p. 1079-1080
Szörényi, T. ; Kovacs, J. ; Szil, E. / SYNTHESIS OF INDIUM SELENIDE WITH PULSED RUBY LASER. Revue roumaine de physique. Vol. 31 9-10. ed. 1986. pp. 1079-1080
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