Synthesis of carbon nitride thin films by low-energy ion beam assisted evaporation: On the mechanisms for fullerene-like microstructure formation

R. Gago, J. Neidhardt, M. Vinnichenko, U. Kreissig, Zs Czigány, A. Kolitsch, L. Hultman, W. Möller

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Carbon nitride (CNx) thin films were grown at different substrate temperatures by low-energy (<100 eV) ion beam assistance deposition (LE-IBAD) in order to discern possible formation mechanisms of a fullerene-like (FL) microstructure. The samples are compared to those of well-structured FL-CNx films synthesized by reactive magnetron sputtering (MS). The comparison yields similar trends for both techniques, such as limitation of the nitrogen content at 20-25 at.%, dominance of sp2 hybrids, as well as thermally activated chemical desorption of CxNy species from the substrate during growth. However, CNx films produced by LE-IBAD are amorphous. The lack of FL structural features correlates with a lower degree of sp2 clustering, attributed to the promotion of nitrile groups. Therefore, low-energy ion bombardment is shown not to be a sufficient condition for the growth of FL-CNx. This result reinforces the eventual relevance of pre-formed CxNy species at the sputtering target in MS for the introduction and/or evolution of FL arrangements.

Original languageEnglish
Pages (from-to)89-94
Number of pages6
JournalThin Solid Films
Volume483
Issue number1-2
DOIs
Publication statusPublished - Jul 1 2005

Keywords

  • Carbon nitride
  • Fullerene-like materials
  • Growth mechanisms
  • IBAD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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