Switches based on high-temperature superconducting thin films

Victor Meerovich, Vladimir Sokolovsky, I. Vajda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Switches based on high-temperature superconducting (HTS) thin films have been developed for the application in fault current limiters and various controlling devices. HTS thin film structures needed for this purpose have usually been fabricated as long multi-layered elements, in which HTS thin film is deposited on a dielectric substrate with high heat conductivity and covered by a thin layer with high electric conductivity. The main challenge has been to provide the fast and simultaneous transition of the whole of switch from the superconducting to the normal state. We experimentally investigated, under DC and AC conditions, the superconducting-normal state (S-N) transition in switches fabricated from parallel and series-connected YBCO thin films. The films were deposited on a sapphire substrate of 0.5 mm in thickness and covered by 100 nm Au layer. The appearance and propagation of normal zones in the films were determined by measuring the voltage drop across their different sections. The results were compared with ones obtained for a single film. The conditions providing a simultaneous S-N transition of the whole of the switch are discussed. It is shown that shunting the film by a resistor improves both the film protection from overheating and the homogeneity of S-N transition in the switch.

Original languageEnglish
Pages (from-to)2047-2050
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume15
Issue number2 PART II
DOIs
Publication statusPublished - Jun 2005

Fingerprint

Superconducting films
switches
Switches
thin films
Temperature
Fault current limiters
conductivity
Aluminum Oxide
Substrates
Sapphire
resistors
Resistors
homogeneity
Thermal conductivity
alternating current
sapphire
direct current
Thin films
heat
propagation

Keywords

  • High-temperature superconductors
  • Quenching
  • Switches
  • Thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Switches based on high-temperature superconducting thin films. / Meerovich, Victor; Sokolovsky, Vladimir; Vajda, I.

In: IEEE Transactions on Applied Superconductivity, Vol. 15, No. 2 PART II, 06.2005, p. 2047-2050.

Research output: Contribution to journalArticle

Meerovich, Victor ; Sokolovsky, Vladimir ; Vajda, I. / Switches based on high-temperature superconducting thin films. In: IEEE Transactions on Applied Superconductivity. 2005 ; Vol. 15, No. 2 PART II. pp. 2047-2050.
@article{63d21e050a204e2aa9b1aea8a20cdd9c,
title = "Switches based on high-temperature superconducting thin films",
abstract = "Switches based on high-temperature superconducting (HTS) thin films have been developed for the application in fault current limiters and various controlling devices. HTS thin film structures needed for this purpose have usually been fabricated as long multi-layered elements, in which HTS thin film is deposited on a dielectric substrate with high heat conductivity and covered by a thin layer with high electric conductivity. The main challenge has been to provide the fast and simultaneous transition of the whole of switch from the superconducting to the normal state. We experimentally investigated, under DC and AC conditions, the superconducting-normal state (S-N) transition in switches fabricated from parallel and series-connected YBCO thin films. The films were deposited on a sapphire substrate of 0.5 mm in thickness and covered by 100 nm Au layer. The appearance and propagation of normal zones in the films were determined by measuring the voltage drop across their different sections. The results were compared with ones obtained for a single film. The conditions providing a simultaneous S-N transition of the whole of the switch are discussed. It is shown that shunting the film by a resistor improves both the film protection from overheating and the homogeneity of S-N transition in the switch.",
keywords = "High-temperature superconductors, Quenching, Switches, Thin films",
author = "Victor Meerovich and Vladimir Sokolovsky and I. Vajda",
year = "2005",
month = "6",
doi = "10.1109/TASC.2005.849448",
language = "English",
volume = "15",
pages = "2047--2050",
journal = "IEEE Transactions on Applied Superconductivity",
issn = "1051-8223",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2 PART II",

}

TY - JOUR

T1 - Switches based on high-temperature superconducting thin films

AU - Meerovich, Victor

AU - Sokolovsky, Vladimir

AU - Vajda, I.

PY - 2005/6

Y1 - 2005/6

N2 - Switches based on high-temperature superconducting (HTS) thin films have been developed for the application in fault current limiters and various controlling devices. HTS thin film structures needed for this purpose have usually been fabricated as long multi-layered elements, in which HTS thin film is deposited on a dielectric substrate with high heat conductivity and covered by a thin layer with high electric conductivity. The main challenge has been to provide the fast and simultaneous transition of the whole of switch from the superconducting to the normal state. We experimentally investigated, under DC and AC conditions, the superconducting-normal state (S-N) transition in switches fabricated from parallel and series-connected YBCO thin films. The films were deposited on a sapphire substrate of 0.5 mm in thickness and covered by 100 nm Au layer. The appearance and propagation of normal zones in the films were determined by measuring the voltage drop across their different sections. The results were compared with ones obtained for a single film. The conditions providing a simultaneous S-N transition of the whole of the switch are discussed. It is shown that shunting the film by a resistor improves both the film protection from overheating and the homogeneity of S-N transition in the switch.

AB - Switches based on high-temperature superconducting (HTS) thin films have been developed for the application in fault current limiters and various controlling devices. HTS thin film structures needed for this purpose have usually been fabricated as long multi-layered elements, in which HTS thin film is deposited on a dielectric substrate with high heat conductivity and covered by a thin layer with high electric conductivity. The main challenge has been to provide the fast and simultaneous transition of the whole of switch from the superconducting to the normal state. We experimentally investigated, under DC and AC conditions, the superconducting-normal state (S-N) transition in switches fabricated from parallel and series-connected YBCO thin films. The films were deposited on a sapphire substrate of 0.5 mm in thickness and covered by 100 nm Au layer. The appearance and propagation of normal zones in the films were determined by measuring the voltage drop across their different sections. The results were compared with ones obtained for a single film. The conditions providing a simultaneous S-N transition of the whole of the switch are discussed. It is shown that shunting the film by a resistor improves both the film protection from overheating and the homogeneity of S-N transition in the switch.

KW - High-temperature superconductors

KW - Quenching

KW - Switches

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=22044438981&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22044438981&partnerID=8YFLogxK

U2 - 10.1109/TASC.2005.849448

DO - 10.1109/TASC.2005.849448

M3 - Article

AN - SCOPUS:22044438981

VL - 15

SP - 2047

EP - 2050

JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

SN - 1051-8223

IS - 2 PART II

ER -