Surface structure of AlSn layered systems codeposited in the presence of oxygen

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Abstract

AlSn layer structures were prepared by simultaneous evaporation of Al and Sn onto a Si substrate covered by amorphous SiO2, at a substrate temperature of 470–480 K and an oxygen partial pressure of 5 × 10−3 Pa and 1.3 × 10−2 Pa, respectively. The chemical state and the depth distribution of the species formed in the surface layers were analysed by XPS and the cross‐section of the layer system was investigated by transmission electron microscopy. The results obtained confirm the formation of an AlOSn solid phase, segregated to the surface, which prevents the growth of various size Al crystals. At higher oxygen partial pressures a cermet‐like structure is observed above the Al film‐substrate interface, while on the top of this layer an amorphous, homogeneous overlayer can be identified.

Original languageEnglish
Pages (from-to)314-317
Number of pages4
JournalSurface and Interface Analysis
Volume22
Issue number1-12
DOIs
Publication statusPublished - Jul 1994

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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