Surface regrowth of Sb ion implanted Si(100)

G. Pető, V. Schiller, N. Q. Khánh, J. Gyulai, J. Kanski

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Thermal regrowth of a Si(100) surface, damaged by 80 keV Sb implantation, was monitored by angular resolved photoemission (ARUPS), Rutherford backscattering (RBS) and channelling. It was found that regrowth in UHV at 650°C does not result in a well ordered surface. Annealing at higher temperatures (700-1100°C) results in densities of surface defects of (2.5 ± 0.4) × 1015 at./cm2. A well ordered Si(100)2 × 1 reconstructed surface can be formed only after removal of a 10 nm thick layer by Ne ion bombardment, and heat treatment at 600°C. These observations can be explained by the formation of a surface layer with misoriented domains simultaneously with the solid phase epitaxy.

Original languageEnglish
Pages (from-to)226-229
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume120
Issue number1-4
Publication statusPublished - Dec 1996

Fingerprint

Ions
ions
surface defects
epitaxy
solid phases
bombardment
implantation
backscattering
surface layers
Surface defects
Rutherford backscattering spectroscopy
Photoemission
heat treatment
photoelectric emission
Ion bombardment
Epitaxial growth
annealing
Heat treatment
Annealing
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Surface regrowth of Sb ion implanted Si(100). / Pető, G.; Schiller, V.; Khánh, N. Q.; Gyulai, J.; Kanski, J.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 120, No. 1-4, 12.1996, p. 226-229.

Research output: Contribution to journalArticle

@article{9dc7f84b74c84127b767ef3ae1965e20,
title = "Surface regrowth of Sb ion implanted Si(100)",
abstract = "Thermal regrowth of a Si(100) surface, damaged by 80 keV Sb implantation, was monitored by angular resolved photoemission (ARUPS), Rutherford backscattering (RBS) and channelling. It was found that regrowth in UHV at 650°C does not result in a well ordered surface. Annealing at higher temperatures (700-1100°C) results in densities of surface defects of (2.5 ± 0.4) × 1015 at./cm2. A well ordered Si(100)2 × 1 reconstructed surface can be formed only after removal of a 10 nm thick layer by Ne ion bombardment, and heat treatment at 600°C. These observations can be explained by the formation of a surface layer with misoriented domains simultaneously with the solid phase epitaxy.",
author = "G. Pető and V. Schiller and Kh{\'a}nh, {N. Q.} and J. Gyulai and J. Kanski",
year = "1996",
month = "12",
language = "English",
volume = "120",
pages = "226--229",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Surface regrowth of Sb ion implanted Si(100)

AU - Pető, G.

AU - Schiller, V.

AU - Khánh, N. Q.

AU - Gyulai, J.

AU - Kanski, J.

PY - 1996/12

Y1 - 1996/12

N2 - Thermal regrowth of a Si(100) surface, damaged by 80 keV Sb implantation, was monitored by angular resolved photoemission (ARUPS), Rutherford backscattering (RBS) and channelling. It was found that regrowth in UHV at 650°C does not result in a well ordered surface. Annealing at higher temperatures (700-1100°C) results in densities of surface defects of (2.5 ± 0.4) × 1015 at./cm2. A well ordered Si(100)2 × 1 reconstructed surface can be formed only after removal of a 10 nm thick layer by Ne ion bombardment, and heat treatment at 600°C. These observations can be explained by the formation of a surface layer with misoriented domains simultaneously with the solid phase epitaxy.

AB - Thermal regrowth of a Si(100) surface, damaged by 80 keV Sb implantation, was monitored by angular resolved photoemission (ARUPS), Rutherford backscattering (RBS) and channelling. It was found that regrowth in UHV at 650°C does not result in a well ordered surface. Annealing at higher temperatures (700-1100°C) results in densities of surface defects of (2.5 ± 0.4) × 1015 at./cm2. A well ordered Si(100)2 × 1 reconstructed surface can be formed only after removal of a 10 nm thick layer by Ne ion bombardment, and heat treatment at 600°C. These observations can be explained by the formation of a surface layer with misoriented domains simultaneously with the solid phase epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0030566532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030566532&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030566532

VL - 120

SP - 226

EP - 229

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-4

ER -