Surface regrowth of implantation damaged Ge(111)

G. Pető, E. Kótai, J. Kanski

Research output: Contribution to journalArticle

Abstract

Annealing induced surface recrystallization of Sb implanted Ge(111) has been investigated by means of ARUPS, LEED and RBS. Our results show this process starts at a relatively low temperature (300°C), but a disordered surface layer persists even after high temperature annealing (650 °C). By removing a 5-17-23 thick surface layer before each thermal annealing, a nearly epitaxially regrown surface was obtained.

Original languageEnglish
Pages (from-to)618-620
Number of pages3
JournalVacuum
Volume41
Issue number1-3
DOIs
Publication statusPublished - 1990

Fingerprint

implantation
annealing
surface layers
Annealing
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Surface regrowth of implantation damaged Ge(111). / Pető, G.; Kótai, E.; Kanski, J.

In: Vacuum, Vol. 41, No. 1-3, 1990, p. 618-620.

Research output: Contribution to journalArticle

Pető, G. ; Kótai, E. ; Kanski, J. / Surface regrowth of implantation damaged Ge(111). In: Vacuum. 1990 ; Vol. 41, No. 1-3. pp. 618-620.
@article{541b54eed74a4420ac5a017e4bdebab9,
title = "Surface regrowth of implantation damaged Ge(111)",
abstract = "Annealing induced surface recrystallization of Sb implanted Ge(111) has been investigated by means of ARUPS, LEED and RBS. Our results show this process starts at a relatively low temperature (300°C), but a disordered surface layer persists even after high temperature annealing (650 °C). By removing a 5-17-23 thick surface layer before each thermal annealing, a nearly epitaxially regrown surface was obtained.",
author = "G. Pető and E. K{\'o}tai and J. Kanski",
year = "1990",
doi = "10.1016/0042-207X(90)90434-Z",
language = "English",
volume = "41",
pages = "618--620",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1-3",

}

TY - JOUR

T1 - Surface regrowth of implantation damaged Ge(111)

AU - Pető, G.

AU - Kótai, E.

AU - Kanski, J.

PY - 1990

Y1 - 1990

N2 - Annealing induced surface recrystallization of Sb implanted Ge(111) has been investigated by means of ARUPS, LEED and RBS. Our results show this process starts at a relatively low temperature (300°C), but a disordered surface layer persists even after high temperature annealing (650 °C). By removing a 5-17-23 thick surface layer before each thermal annealing, a nearly epitaxially regrown surface was obtained.

AB - Annealing induced surface recrystallization of Sb implanted Ge(111) has been investigated by means of ARUPS, LEED and RBS. Our results show this process starts at a relatively low temperature (300°C), but a disordered surface layer persists even after high temperature annealing (650 °C). By removing a 5-17-23 thick surface layer before each thermal annealing, a nearly epitaxially regrown surface was obtained.

UR - http://www.scopus.com/inward/record.url?scp=0025531812&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025531812&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(90)90434-Z

DO - 10.1016/0042-207X(90)90434-Z

M3 - Article

AN - SCOPUS:0025531812

VL - 41

SP - 618

EP - 620

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1-3

ER -