Surface potential transients of ultrathin SiO2Si structures

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The surface potential of ultrathin (1-3 nm) silicon-dioxide layers upon silicon substrate has been measured by vibrating capacitor (Kelvin) method. By illuminating the surface of the ultrathin SiO2Si system, a change of some hundreds of millivolts in the work function difference has been observed. After switching off the light the original (dark) value of the work function is reached through a transient process. The time constant of this transient process increases very strongly with increasing oxide thicknesses. Analysing the transient process the native oxide growth can be observed. Other oxides (e.g. that has been prepared in boiling nitric acid and thermally grown oxides) have also been investigated.

Original languageEnglish
Pages (from-to)951-957
Number of pages7
JournalSolid-State Electronics
Volume34
Issue number9
DOIs
Publication statusPublished - 1991

Fingerprint

Surface potential
Oxides
oxides
Nitric Acid
nitric acid
Silicon
Nitric acid
Silicon Dioxide
boiling
illuminating
Boiling liquids
time constant
capacitors
Capacitors
Silica
silicon dioxide
silicon
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Surface potential transients of ultrathin SiO2Si structures. / Mizsei, J.

In: Solid-State Electronics, Vol. 34, No. 9, 1991, p. 951-957.

Research output: Contribution to journalArticle

@article{575655ddf9d54578b409bed64ee2c35d,
title = "Surface potential transients of ultrathin SiO2Si structures",
abstract = "The surface potential of ultrathin (1-3 nm) silicon-dioxide layers upon silicon substrate has been measured by vibrating capacitor (Kelvin) method. By illuminating the surface of the ultrathin SiO2Si system, a change of some hundreds of millivolts in the work function difference has been observed. After switching off the light the original (dark) value of the work function is reached through a transient process. The time constant of this transient process increases very strongly with increasing oxide thicknesses. Analysing the transient process the native oxide growth can be observed. Other oxides (e.g. that has been prepared in boiling nitric acid and thermally grown oxides) have also been investigated.",
author = "J. Mizsei",
year = "1991",
doi = "10.1016/0038-1101(91)90213-I",
language = "English",
volume = "34",
pages = "951--957",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Surface potential transients of ultrathin SiO2Si structures

AU - Mizsei, J.

PY - 1991

Y1 - 1991

N2 - The surface potential of ultrathin (1-3 nm) silicon-dioxide layers upon silicon substrate has been measured by vibrating capacitor (Kelvin) method. By illuminating the surface of the ultrathin SiO2Si system, a change of some hundreds of millivolts in the work function difference has been observed. After switching off the light the original (dark) value of the work function is reached through a transient process. The time constant of this transient process increases very strongly with increasing oxide thicknesses. Analysing the transient process the native oxide growth can be observed. Other oxides (e.g. that has been prepared in boiling nitric acid and thermally grown oxides) have also been investigated.

AB - The surface potential of ultrathin (1-3 nm) silicon-dioxide layers upon silicon substrate has been measured by vibrating capacitor (Kelvin) method. By illuminating the surface of the ultrathin SiO2Si system, a change of some hundreds of millivolts in the work function difference has been observed. After switching off the light the original (dark) value of the work function is reached through a transient process. The time constant of this transient process increases very strongly with increasing oxide thicknesses. Analysing the transient process the native oxide growth can be observed. Other oxides (e.g. that has been prepared in boiling nitric acid and thermally grown oxides) have also been investigated.

UR - http://www.scopus.com/inward/record.url?scp=0026219333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026219333&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(91)90213-I

DO - 10.1016/0038-1101(91)90213-I

M3 - Article

VL - 34

SP - 951

EP - 957

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -