Surface pattern recording in amorphous chalcogenide layers

V. Takáts, F. C. Miller, Himanshu Jain, C. Cserháti, I. Szabó, D. Beke, S. Kökényesi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Investigations of light-induced volume expansion and surface pattern recording in amorphous chalcogenide layers and nano-layered structures (NLS) were extended to direct electron-beam recording on Se/As2S3 and Sb/As2S3 NLS. Light as well as e-beam induced bleaching occurs in all NLS, while volume expansion occurs only in chalcogenide-chalcogenide NLS and in homogeneous Se or As2S3 layers. Comparison of these two phenomena revealed the possible role of purely electronic and thermal processes in the interdiffusion and relief formation. The latter is supposed to be connected with radiation-induced defect creation, free volume increase under the increased fluidity conditions as well as with the possible additional influence of electrostatic forces and stress.

Original languageEnglish
Pages (from-to)1849-1852
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume355
Issue number37-42
DOIs
Publication statusPublished - Oct 1 2009

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recording
expansion
Electrostatic force
Fluidity
Free volume
bleaching
Bleaching
Electron beams
electron beams
electrostatics
Radiation
Defects
defects
radiation
electronics
Hot Temperature

Keywords

  • Amorphous films
  • Electron microscopy
  • Optical properties

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Surface pattern recording in amorphous chalcogenide layers. / Takáts, V.; Miller, F. C.; Jain, Himanshu; Cserháti, C.; Szabó, I.; Beke, D.; Kökényesi, S.

In: Journal of Non-Crystalline Solids, Vol. 355, No. 37-42, 01.10.2009, p. 1849-1852.

Research output: Contribution to journalArticle

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