Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide

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Abstract

In order to study the effect of the substrate orientation on the incorporation of excess arsenic into low temperature grown gallium arsenide, we examine molecular beam epitaxial layers grown at constant low substrate temperatures and constant III/V flux ratio on exactly (001) oriented substrates and on vicinal substrates tilted up to 10° towards the 〈111〉A and 〈111〉B directions. Our experiments show that the substrate orientation has a significant influence on the excess arsenic content and thus needs to be considered as an additional parameter to control low temperature growth of gallium arsenide. Respective ab-initio calculations offer first models for the incorporation of excess arsenic into As antisite and As interstitial positions on misoriented as well as exactly oriented substrates.

Original languageEnglish
Pages (from-to)2980-2991
Number of pages12
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number15
DOIs
Publication statusPublished - Dec 2005

Fingerprint

Gallium arsenide
gallium
Arsenic
Substrates
arsenic
Molecular beams
Epitaxial layers
Growth temperature
molecular beams
gallium arsenide
interstitials
Fluxes
Temperature
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "In order to study the effect of the substrate orientation on the incorporation of excess arsenic into low temperature grown gallium arsenide, we examine molecular beam epitaxial layers grown at constant low substrate temperatures and constant III/V flux ratio on exactly (001) oriented substrates and on vicinal substrates tilted up to 10° towards the 〈111〉A and 〈111〉B directions. Our experiments show that the substrate orientation has a significant influence on the excess arsenic content and thus needs to be considered as an additional parameter to control low temperature growth of gallium arsenide. Respective ab-initio calculations offer first models for the incorporation of excess arsenic into As antisite and As interstitial positions on misoriented as well as exactly oriented substrates.",
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T1 - Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide

AU - Marek, T.

AU - Schür, C.

AU - Kunsági-Máté, S.

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N2 - In order to study the effect of the substrate orientation on the incorporation of excess arsenic into low temperature grown gallium arsenide, we examine molecular beam epitaxial layers grown at constant low substrate temperatures and constant III/V flux ratio on exactly (001) oriented substrates and on vicinal substrates tilted up to 10° towards the 〈111〉A and 〈111〉B directions. Our experiments show that the substrate orientation has a significant influence on the excess arsenic content and thus needs to be considered as an additional parameter to control low temperature growth of gallium arsenide. Respective ab-initio calculations offer first models for the incorporation of excess arsenic into As antisite and As interstitial positions on misoriented as well as exactly oriented substrates.

AB - In order to study the effect of the substrate orientation on the incorporation of excess arsenic into low temperature grown gallium arsenide, we examine molecular beam epitaxial layers grown at constant low substrate temperatures and constant III/V flux ratio on exactly (001) oriented substrates and on vicinal substrates tilted up to 10° towards the 〈111〉A and 〈111〉B directions. Our experiments show that the substrate orientation has a significant influence on the excess arsenic content and thus needs to be considered as an additional parameter to control low temperature growth of gallium arsenide. Respective ab-initio calculations offer first models for the incorporation of excess arsenic into As antisite and As interstitial positions on misoriented as well as exactly oriented substrates.

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