Surface orientation as a control parameter for the growth of non-stoichiometric gallium arsenide

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Abstract

In order to study the effect of the substrate orientation on the incorporation of excess arsenic into low temperature grown gallium arsenide, we examine molecular beam epitaxial layers grown at constant low substrate temperatures and constant III/V flux ratio on exactly (001) oriented substrates and on vicinal substrates tilted up to 10° towards the 〈111〉A and 〈111〉B directions. Our experiments show that the substrate orientation has a significant influence on the excess arsenic content and thus needs to be considered as an additional parameter to control low temperature growth of gallium arsenide. Respective ab-initio calculations offer first models for the incorporation of excess arsenic into As antisite and As interstitial positions on misoriented as well as exactly oriented substrates.

Original languageEnglish
Pages (from-to)2980-2991
Number of pages12
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number15
DOIs
Publication statusPublished - Dec 1 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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