Surface morphology of AlN films synthesized by pulsed laser deposition

S. Bakalova, A. Szekeres, G. Huhn, K. Havancsák, S. Grigorescu, G. Socol, C. Ristoscu, I. N. Mihailescu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Surface morphology of AlN films, synthesized on Si substrates by pulsed laser deposition, has been examined by recording atomic-force-microscopy (AFM) images. The influence of N2 ambient pressure, ranging from 5 × 10-4 Pa to 10 Pa, is reflected well in the alteration of the surface roughness and size of crystallites of the AlN films. A tendency of a decrease in the surface roughness with increasing N2 pressure was observed, which also correlates with the polycrystalline structure of the films. Deposition in vacuum resulted in the highest surface roughness due to the large size of crystallites emerging from the surface, while increasing the nitrogen pressure yielded smaller crystallites and a smoother film surface. The presented results could be useful for applications of pulsed laser deposited AlN in different optical and acoustic devices, where the crystalline quality of the AlN films and the surface is very important.

Original languageEnglish
Pages (from-to)155-157
Number of pages3
JournalVacuum
Volume84
Issue number1
DOIs
Publication statusPublished - Aug 25 2009

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Surface morphology
Crystallites
crystallites
surface roughness
Surface roughness
Acoustic devices
Optical devices
Pulsed lasers
emerging
Atomic force microscopy
pulsed lasers
tendencies
Nitrogen
recording
atomic force microscopy
Vacuum
Crystalline materials
nitrogen

Keywords

  • AFM
  • Aluminium nitride
  • Pulsed laser deposition
  • Surface morphology

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Instrumentation
  • Surfaces, Coatings and Films

Cite this

Bakalova, S., Szekeres, A., Huhn, G., Havancsák, K., Grigorescu, S., Socol, G., ... Mihailescu, I. N. (2009). Surface morphology of AlN films synthesized by pulsed laser deposition. Vacuum, 84(1), 155-157. https://doi.org/10.1016/j.vacuum.2009.04.063

Surface morphology of AlN films synthesized by pulsed laser deposition. / Bakalova, S.; Szekeres, A.; Huhn, G.; Havancsák, K.; Grigorescu, S.; Socol, G.; Ristoscu, C.; Mihailescu, I. N.

In: Vacuum, Vol. 84, No. 1, 25.08.2009, p. 155-157.

Research output: Contribution to journalArticle

Bakalova, S, Szekeres, A, Huhn, G, Havancsák, K, Grigorescu, S, Socol, G, Ristoscu, C & Mihailescu, IN 2009, 'Surface morphology of AlN films synthesized by pulsed laser deposition', Vacuum, vol. 84, no. 1, pp. 155-157. https://doi.org/10.1016/j.vacuum.2009.04.063
Bakalova S, Szekeres A, Huhn G, Havancsák K, Grigorescu S, Socol G et al. Surface morphology of AlN films synthesized by pulsed laser deposition. Vacuum. 2009 Aug 25;84(1):155-157. https://doi.org/10.1016/j.vacuum.2009.04.063
Bakalova, S. ; Szekeres, A. ; Huhn, G. ; Havancsák, K. ; Grigorescu, S. ; Socol, G. ; Ristoscu, C. ; Mihailescu, I. N. / Surface morphology of AlN films synthesized by pulsed laser deposition. In: Vacuum. 2009 ; Vol. 84, No. 1. pp. 155-157.
@article{fe2bc7999055420f84eede50c2715fa9,
title = "Surface morphology of AlN films synthesized by pulsed laser deposition",
abstract = "Surface morphology of AlN films, synthesized on Si substrates by pulsed laser deposition, has been examined by recording atomic-force-microscopy (AFM) images. The influence of N2 ambient pressure, ranging from 5 × 10-4 Pa to 10 Pa, is reflected well in the alteration of the surface roughness and size of crystallites of the AlN films. A tendency of a decrease in the surface roughness with increasing N2 pressure was observed, which also correlates with the polycrystalline structure of the films. Deposition in vacuum resulted in the highest surface roughness due to the large size of crystallites emerging from the surface, while increasing the nitrogen pressure yielded smaller crystallites and a smoother film surface. The presented results could be useful for applications of pulsed laser deposited AlN in different optical and acoustic devices, where the crystalline quality of the AlN films and the surface is very important.",
keywords = "AFM, Aluminium nitride, Pulsed laser deposition, Surface morphology",
author = "S. Bakalova and A. Szekeres and G. Huhn and K. Havancs{\'a}k and S. Grigorescu and G. Socol and C. Ristoscu and Mihailescu, {I. N.}",
year = "2009",
month = "8",
day = "25",
doi = "10.1016/j.vacuum.2009.04.063",
language = "English",
volume = "84",
pages = "155--157",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1",

}

TY - JOUR

T1 - Surface morphology of AlN films synthesized by pulsed laser deposition

AU - Bakalova, S.

AU - Szekeres, A.

AU - Huhn, G.

AU - Havancsák, K.

AU - Grigorescu, S.

AU - Socol, G.

AU - Ristoscu, C.

AU - Mihailescu, I. N.

PY - 2009/8/25

Y1 - 2009/8/25

N2 - Surface morphology of AlN films, synthesized on Si substrates by pulsed laser deposition, has been examined by recording atomic-force-microscopy (AFM) images. The influence of N2 ambient pressure, ranging from 5 × 10-4 Pa to 10 Pa, is reflected well in the alteration of the surface roughness and size of crystallites of the AlN films. A tendency of a decrease in the surface roughness with increasing N2 pressure was observed, which also correlates with the polycrystalline structure of the films. Deposition in vacuum resulted in the highest surface roughness due to the large size of crystallites emerging from the surface, while increasing the nitrogen pressure yielded smaller crystallites and a smoother film surface. The presented results could be useful for applications of pulsed laser deposited AlN in different optical and acoustic devices, where the crystalline quality of the AlN films and the surface is very important.

AB - Surface morphology of AlN films, synthesized on Si substrates by pulsed laser deposition, has been examined by recording atomic-force-microscopy (AFM) images. The influence of N2 ambient pressure, ranging from 5 × 10-4 Pa to 10 Pa, is reflected well in the alteration of the surface roughness and size of crystallites of the AlN films. A tendency of a decrease in the surface roughness with increasing N2 pressure was observed, which also correlates with the polycrystalline structure of the films. Deposition in vacuum resulted in the highest surface roughness due to the large size of crystallites emerging from the surface, while increasing the nitrogen pressure yielded smaller crystallites and a smoother film surface. The presented results could be useful for applications of pulsed laser deposited AlN in different optical and acoustic devices, where the crystalline quality of the AlN films and the surface is very important.

KW - AFM

KW - Aluminium nitride

KW - Pulsed laser deposition

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=69249203560&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249203560&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2009.04.063

DO - 10.1016/j.vacuum.2009.04.063

M3 - Article

AN - SCOPUS:69249203560

VL - 84

SP - 155

EP - 157

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1

ER -