Surface modifications of Ga2O3 thin film sensors with Rh, Ru and Ir clusters

A. C. Lang, M. Fleischer, H. Meixner

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Semiconducting Ga2O3 thin films react with several different gases at temperatures higher than 600 °C changing its conductivity. These changes of conductivity are measured by using a Platinum pattern underneath the Ga2O3 surface. In this project we added on a Ga2O3 surface, which by itself shows no strong activity as oxidation catalyst, Iridium, Rhodium and Ruthenium compounds, which change the sensitivity of the used sensors. Dissolved in organic solvents, these compounds were dispensed on the surface, then - by heating - converted into oxides and metals. This thermal decomposition process led to the formation of clusters. The so formed new sensors showed a high reproducibility and stability of their gas-sensitive electrical properties. To characterize the sensors they were tested with a variety of different gases and at different temperatures. Interesting results on very low concentrations of Ethanol and Propane were found.

Original languageEnglish
Pages (from-to)80-84
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume66
Issue number1
DOIs
Publication statusPublished - Jul 25 2000

Fingerprint

Surface treatment
Gases
Thin films
Iridium compounds
Rhodium compounds
sensors
Ruthenium Compounds
Sensors
iridium compounds
Ruthenium compounds
rhodium compounds
ruthenium compounds
thin films
gases
Semiconducting films
conductivity
Propane
Platinum
propane
Organic solvents

ASJC Scopus subject areas

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Surface modifications of Ga2O3 thin film sensors with Rh, Ru and Ir clusters. / Lang, A. C.; Fleischer, M.; Meixner, H.

In: Sensors and Actuators, B: Chemical, Vol. 66, No. 1, 25.07.2000, p. 80-84.

Research output: Contribution to journalArticle

@article{726c8b4409da40ffb16c6f95e0c35e75,
title = "Surface modifications of Ga2O3 thin film sensors with Rh, Ru and Ir clusters",
abstract = "Semiconducting Ga2O3 thin films react with several different gases at temperatures higher than 600 °C changing its conductivity. These changes of conductivity are measured by using a Platinum pattern underneath the Ga2O3 surface. In this project we added on a Ga2O3 surface, which by itself shows no strong activity as oxidation catalyst, Iridium, Rhodium and Ruthenium compounds, which change the sensitivity of the used sensors. Dissolved in organic solvents, these compounds were dispensed on the surface, then - by heating - converted into oxides and metals. This thermal decomposition process led to the formation of clusters. The so formed new sensors showed a high reproducibility and stability of their gas-sensitive electrical properties. To characterize the sensors they were tested with a variety of different gases and at different temperatures. Interesting results on very low concentrations of Ethanol and Propane were found.",
author = "Lang, {A. C.} and M. Fleischer and H. Meixner",
year = "2000",
month = "7",
day = "25",
doi = "10.1016/S0925-4005(99)00347-0",
language = "English",
volume = "66",
pages = "80--84",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Surface modifications of Ga2O3 thin film sensors with Rh, Ru and Ir clusters

AU - Lang, A. C.

AU - Fleischer, M.

AU - Meixner, H.

PY - 2000/7/25

Y1 - 2000/7/25

N2 - Semiconducting Ga2O3 thin films react with several different gases at temperatures higher than 600 °C changing its conductivity. These changes of conductivity are measured by using a Platinum pattern underneath the Ga2O3 surface. In this project we added on a Ga2O3 surface, which by itself shows no strong activity as oxidation catalyst, Iridium, Rhodium and Ruthenium compounds, which change the sensitivity of the used sensors. Dissolved in organic solvents, these compounds were dispensed on the surface, then - by heating - converted into oxides and metals. This thermal decomposition process led to the formation of clusters. The so formed new sensors showed a high reproducibility and stability of their gas-sensitive electrical properties. To characterize the sensors they were tested with a variety of different gases and at different temperatures. Interesting results on very low concentrations of Ethanol and Propane were found.

AB - Semiconducting Ga2O3 thin films react with several different gases at temperatures higher than 600 °C changing its conductivity. These changes of conductivity are measured by using a Platinum pattern underneath the Ga2O3 surface. In this project we added on a Ga2O3 surface, which by itself shows no strong activity as oxidation catalyst, Iridium, Rhodium and Ruthenium compounds, which change the sensitivity of the used sensors. Dissolved in organic solvents, these compounds were dispensed on the surface, then - by heating - converted into oxides and metals. This thermal decomposition process led to the formation of clusters. The so formed new sensors showed a high reproducibility and stability of their gas-sensitive electrical properties. To characterize the sensors they were tested with a variety of different gases and at different temperatures. Interesting results on very low concentrations of Ethanol and Propane were found.

UR - http://www.scopus.com/inward/record.url?scp=0033724338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033724338&partnerID=8YFLogxK

U2 - 10.1016/S0925-4005(99)00347-0

DO - 10.1016/S0925-4005(99)00347-0

M3 - Article

AN - SCOPUS:0033724338

VL - 66

SP - 80

EP - 84

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1

ER -