Surface disorder production during plasma immersion implantation and high energy ion implantation

M. A. El-Sherbiny, N. Q. Khánh, H. Wormeester, M. Fried, T. Lohner, I. Pintér, J. Gyulai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High-depth-resolution Rutherford Backscattering Spectrometry (RBS) combined with channeling technique was used to analyze the surface layer formed during plasma immersion ion implantation (PIII) of single crystal silicon substrates. Single wavelength multiple angle of incidence ellipsometry (MAIE) was applied to estimate the thickness of the surface layer. The thickness of the disordered layer is much higher than the projected range of P ions and it is comparable with that of protons. Another example of surface damage investigation is the analysis of anomalous surface disorder created by 900 keV and 1.4 MeV Xe implantation in 〈100〉 silicon. For the 900 keV implants the surface damage was also characterized with spectroellipsometry (SE). Evaluation of ellipsometric data yields thickness values for surface damage that are in reasonable agreement with those obtained by RBS.

Original languageEnglish
Pages (from-to)728-732
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume118
Issue number1-4
DOIs
Publication statusPublished - Sep 1996

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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