Surface disorder production during plasma immersion implantation

T. Lohner, N. Q. Khánh, P. Petrik, L. Bíró, M. Fried, I. Pintér, W. Lehnert, L. Frey, H. Ryssel, D. J. Wentink, J. Gyulai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Comparative investigations were performed using high-depth-resolution Rutherford backscattering (RBS) combined with channeling, spectroellipsometry (SE) and atomic force microscopy (AFM) to analyze surface disorder and surface roughness formed during plasma immersion implantation of silicon (100) substrates in a gas mixture containing PH3. In order to enhance the sensitivity to the determination of the oxygen content of the surface oxide layer, the 3.05 MeV (4He+, 4He+) nuclear resonance was used in combination with channeling. For the analysis of SE data we used the method in which an appropriate optical model is assumed and a best fit to the model parameters is obtained (i.e. the thickness of surface oxide and damaged silicon layers and the volume fraction of the components). Evaluation of RBS spectra yields damage profiles consistent with those obtained by SE modelling.

Original languageEnglish
Pages (from-to)254-258
Number of pages5
JournalThin Solid Films
Volume313-314
Publication statusPublished - Feb 13 1998

Fingerprint

Plasma sources
submerging
implantation
Rutherford backscattering spectroscopy
disorders
Silicon
Oxides
backscattering
oxides
silicon
Gas mixtures
Ion implantation
gas mixtures
Atomic force microscopy
Volume fraction
surface roughness
roughness
Surface roughness
atomic force microscopy
Oxygen

Keywords

  • Atomic force microscopy
  • Plasma immersion ion implantation
  • Rutherford backscattering spectrometry
  • Spectroellipsometry
  • Surface disorder
  • Surface roughness

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Surface disorder production during plasma immersion implantation. / Lohner, T.; Khánh, N. Q.; Petrik, P.; Bíró, L.; Fried, M.; Pintér, I.; Lehnert, W.; Frey, L.; Ryssel, H.; Wentink, D. J.; Gyulai, J.

In: Thin Solid Films, Vol. 313-314, 13.02.1998, p. 254-258.

Research output: Contribution to journalArticle

Lohner, T, Khánh, NQ, Petrik, P, Bíró, L, Fried, M, Pintér, I, Lehnert, W, Frey, L, Ryssel, H, Wentink, DJ & Gyulai, J 1998, 'Surface disorder production during plasma immersion implantation', Thin Solid Films, vol. 313-314, pp. 254-258.
Lohner, T. ; Khánh, N. Q. ; Petrik, P. ; Bíró, L. ; Fried, M. ; Pintér, I. ; Lehnert, W. ; Frey, L. ; Ryssel, H. ; Wentink, D. J. ; Gyulai, J. / Surface disorder production during plasma immersion implantation. In: Thin Solid Films. 1998 ; Vol. 313-314. pp. 254-258.
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AU - Bíró, L.

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AU - Pintér, I.

AU - Lehnert, W.

AU - Frey, L.

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AU - Wentink, D. J.

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