Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100)

G. Pető, Z. Horváth, J. Kanski

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Si(100) was implanted with 80 keV Ge ions to a Si95Ge5 composition. The implanted layer (120 nm thick) was amorphous as judged by XTEM, but the valence band photoelectron spectra from this system were clearly different from earlier data on amorphous Si. Thermal regrowth of the damaged layer was found to proceed, as expected, from the damaged-undamaged interface. However, even after extended annealing at temperatures well above that required for interfacial regrowth, the surface region remained disordered (non-single crystal). The results are interpreted in terms of parallel recrystallization of the implantation-damaged layer at the interface as well as at the surface. Due to lack of a template, the latter process does not result in a single crystal.

Original languageEnglish
Pages (from-to)428-432
Number of pages5
JournalApplied Surface Science
Volume166
Issue number1
DOIs
Publication statusPublished - Oct 9 2000

Fingerprint

Crystallization
Ion implantation
ion implantation
crystallization
Photoelectrons
Valence bands
Single crystals
Annealing
Ions
Crystals
implantation
photoelectrons
templates
Chemical analysis
valence
annealing
single crystals
Temperature
crystals
ions

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100). / Pető, G.; Horváth, Z.; Kanski, J.

In: Applied Surface Science, Vol. 166, No. 1, 09.10.2000, p. 428-432.

Research output: Contribution to journalArticle

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