Abstract
Si(100) was implanted with 80 keV Ge ions to a Si95Ge5 composition. The implanted layer (120 nm thick) was amorphous as judged by XTEM, but the valence band photoelectron spectra from this system were clearly different from earlier data on amorphous Si. Thermal regrowth of the damaged layer was found to proceed, as expected, from the damaged-undamaged interface. However, even after extended annealing at temperatures well above that required for interfacial regrowth, the surface region remained disordered (non-single crystal). The results are interpreted in terms of parallel recrystallization of the implantation-damaged layer at the interface as well as at the surface. Due to lack of a template, the latter process does not result in a single crystal.
| Original language | English |
|---|---|
| Pages (from-to) | 428-432 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 166 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Oct 9 2000 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
Cite this
Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100). / Pető, G.; Horváth, Z.; Kanski, J.
In: Applied Surface Science, Vol. 166, No. 1, 09.10.2000, p. 428-432.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface crystallization of ion-implantation damaged Si95Ge5 on Si(100)
AU - Pető, G.
AU - Horváth, Z.
AU - Kanski, J.
PY - 2000/10/9
Y1 - 2000/10/9
N2 - Si(100) was implanted with 80 keV Ge ions to a Si95Ge5 composition. The implanted layer (120 nm thick) was amorphous as judged by XTEM, but the valence band photoelectron spectra from this system were clearly different from earlier data on amorphous Si. Thermal regrowth of the damaged layer was found to proceed, as expected, from the damaged-undamaged interface. However, even after extended annealing at temperatures well above that required for interfacial regrowth, the surface region remained disordered (non-single crystal). The results are interpreted in terms of parallel recrystallization of the implantation-damaged layer at the interface as well as at the surface. Due to lack of a template, the latter process does not result in a single crystal.
AB - Si(100) was implanted with 80 keV Ge ions to a Si95Ge5 composition. The implanted layer (120 nm thick) was amorphous as judged by XTEM, but the valence band photoelectron spectra from this system were clearly different from earlier data on amorphous Si. Thermal regrowth of the damaged layer was found to proceed, as expected, from the damaged-undamaged interface. However, even after extended annealing at temperatures well above that required for interfacial regrowth, the surface region remained disordered (non-single crystal). The results are interpreted in terms of parallel recrystallization of the implantation-damaged layer at the interface as well as at the surface. Due to lack of a template, the latter process does not result in a single crystal.
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UR - http://www.scopus.com/inward/citedby.url?scp=0034300279&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(00)00462-1
DO - 10.1016/S0169-4332(00)00462-1
M3 - Article
VL - 166
SP - 428
EP - 432
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1
ER -