Surface and nanomechanical properties of Si

C:H films prepared by RF plasma beam CVD

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates, using electron cyclotron wave resonance (ECWR) plasma beam CVD. Surface chemical analysis was performed by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Nanomechanical properties like hardness and reduced modulus were determined by the nanoindentation method. For the DLCSi layers the C/Si ratio increased with the increase of the self-bias. Nanohardness and reduced modulus had a strong tendency to increase with increasing C/Si. The modified Auger parameter for silicon (Si α) and the bulk plasmon loss energy of the C 1s peak (E p) also increased with C/Si. For the whole set of Si-containing a-C:H film samples a correlation has been established between Si α and E p.

Original languageEnglish
Pages (from-to)954-958
Number of pages5
JournalDiamond and Related Materials
Volume14
Issue number3-7
DOIs
Publication statusPublished - Mar 2005

Fingerprint

Silicon
surface properties
Chemical vapor deposition
vapor deposition
Plasmas
silicon
Nanohardness
Cyclotrons
plasma resonance
Nanoindentation
Auger electron spectroscopy
Aluminum
Silicon wafers
nanoindentation
chemical analysis
Energy dissipation
Auger spectroscopy
X ray photoelectron spectroscopy
cyclotrons
electron spectroscopy

Keywords

  • Diamond-like carbon
  • Mechanical properties
  • Plasma CVD
  • Surface characterization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

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title = "Surface and nanomechanical properties of Si: C:H films prepared by RF plasma beam CVD",
abstract = "Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates, using electron cyclotron wave resonance (ECWR) plasma beam CVD. Surface chemical analysis was performed by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Nanomechanical properties like hardness and reduced modulus were determined by the nanoindentation method. For the DLCSi layers the C/Si ratio increased with the increase of the self-bias. Nanohardness and reduced modulus had a strong tendency to increase with increasing C/Si. The modified Auger parameter for silicon (Si α) and the bulk plasmon loss energy of the C 1s peak (E p) also increased with C/Si. For the whole set of Si-containing a-C:H film samples a correlation has been established between Si α and E p.",
keywords = "Diamond-like carbon, Mechanical properties, Plasma CVD, Surface characterization",
author = "A. T{\'o}th and M. Mohai and T. Ujv{\'a}ri and I. Bert{\'o}ti",
year = "2005",
month = "3",
doi = "10.1016/j.diamond.2005.01.017",
language = "English",
volume = "14",
pages = "954--958",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "3-7",

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TY - JOUR

T1 - Surface and nanomechanical properties of Si

T2 - C:H films prepared by RF plasma beam CVD

AU - Tóth, A.

AU - Mohai, M.

AU - Ujvári, T.

AU - Bertóti, I.

PY - 2005/3

Y1 - 2005/3

N2 - Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates, using electron cyclotron wave resonance (ECWR) plasma beam CVD. Surface chemical analysis was performed by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Nanomechanical properties like hardness and reduced modulus were determined by the nanoindentation method. For the DLCSi layers the C/Si ratio increased with the increase of the self-bias. Nanohardness and reduced modulus had a strong tendency to increase with increasing C/Si. The modified Auger parameter for silicon (Si α) and the bulk plasmon loss energy of the C 1s peak (E p) also increased with C/Si. For the whole set of Si-containing a-C:H film samples a correlation has been established between Si α and E p.

AB - Si-, SiOx- and SiNx-containing a-C:H films (denoted as DLCSi, DLCSiO and DLCSiN) were deposited respectively from tetramethylsilane, hexamethyldisiloxane and hexamethyldisilazane precursors onto silicon wafer and aluminium substrates, using electron cyclotron wave resonance (ECWR) plasma beam CVD. Surface chemical analysis was performed by X-ray photoelectron spectroscopy and X-ray induced Auger electron spectroscopy. Nanomechanical properties like hardness and reduced modulus were determined by the nanoindentation method. For the DLCSi layers the C/Si ratio increased with the increase of the self-bias. Nanohardness and reduced modulus had a strong tendency to increase with increasing C/Si. The modified Auger parameter for silicon (Si α) and the bulk plasmon loss energy of the C 1s peak (E p) also increased with C/Si. For the whole set of Si-containing a-C:H film samples a correlation has been established between Si α and E p.

KW - Diamond-like carbon

KW - Mechanical properties

KW - Plasma CVD

KW - Surface characterization

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U2 - 10.1016/j.diamond.2005.01.017

DO - 10.1016/j.diamond.2005.01.017

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