4He + BACKSCATTERING INVESTIGATIONS ON SPUTTERED Gd-Co AMORPHOUS FILMS.

T. Tarnoczi, I. Nagy, G. Mezey, T. Nagy, E. Kotai, G. Peto

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

Amorphous Gd-Co thin films have been prepared by cathode sputtering both in the presence and in the absence of a bias voltage. The Gd/Co ratio and the density of the thin films were determined by backscattering of **4He** plus ions. A change in the Gd/Co ratio and a decrease in the density were observed when a bias voltage was applied. These results provided information concerning the origin of the uniaxial anisotropy which is very characteristic of amorphous thin films prepared by cathode sputtering with a bias voltage.

Original languageEnglish
Pages141-144
Number of pages4
Publication statusPublished - Jan 1 1976
EventColloq Int sur la Pulverisation Cathod et ses Appl, 2nd - Nice, Fr
Duration: May 18 1976May 21 1976

Other

OtherColloq Int sur la Pulverisation Cathod et ses Appl, 2nd
CityNice, Fr
Period5/18/765/21/76

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tarnoczi, T., Nagy, I., Mezey, G., Nagy, T., Kotai, E., & Peto, G. (1976). 4He + BACKSCATTERING INVESTIGATIONS ON SPUTTERED Gd-Co AMORPHOUS FILMS.. 141-144. Paper presented at Colloq Int sur la Pulverisation Cathod et ses Appl, 2nd, Nice, Fr, .