Amorphous Gd-Co thin films have been prepared by cathode sputtering both in the presence and in the absence of a bias voltage. The Gd/Co ratio and the density of the thin films were determined by backscattering of **4He** plus ions. A change in the Gd/Co ratio and a decrease in the density were observed when a bias voltage was applied. These results provided information concerning the origin of the uniaxial anisotropy which is very characteristic of amorphous thin films prepared by cathode sputtering with a bias voltage.
|Number of pages||4|
|Publication status||Published - Jan 1 1976|
|Event||Colloq Int sur la Pulverisation Cathod et ses Appl, 2nd - Nice, Fr|
Duration: May 18 1976 → May 21 1976
|Other||Colloq Int sur la Pulverisation Cathod et ses Appl, 2nd|
|Period||5/18/76 → 5/21/76|
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