Suicide formation reactions in a-Si/Co multilayered samples

Z. Balogh, C. Cserháti, Z. Erdélyi, A. Csík, G. Langer, I. Zizak, N. Darowski, E. Dudzik, R. Feyerherm, D. Beke

Research output: Contribution to journalArticle

Abstract

Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.

Original languageEnglish
Pages (from-to)3-8
Number of pages6
JournalDefect and Diffusion Forum
Volume277
DOIs
Publication statusPublished - 2008

Fingerprint

Kinetics
kinetics
Solid state reactions
exponents
reaction control
solid state
Synchrotron radiation
Germany
Magnetron sputtering
Temperature
decay rates
magnetron sputtering
synchrotron radiation
asymmetry
Crystalline materials
heat
temperature
Hot Temperature

Keywords

  • Co/Si
  • Multilayers
  • Non parabolic growth
  • Solid state reaction
  • Suicide formations

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Suicide formation reactions in a-Si/Co multilayered samples. / Balogh, Z.; Cserháti, C.; Erdélyi, Z.; Csík, A.; Langer, G.; Zizak, I.; Darowski, N.; Dudzik, E.; Feyerherm, R.; Beke, D.

In: Defect and Diffusion Forum, Vol. 277, 2008, p. 3-8.

Research output: Contribution to journalArticle

Balogh, Z. ; Cserháti, C. ; Erdélyi, Z. ; Csík, A. ; Langer, G. ; Zizak, I. ; Darowski, N. ; Dudzik, E. ; Feyerherm, R. ; Beke, D. / Suicide formation reactions in a-Si/Co multilayered samples. In: Defect and Diffusion Forum. 2008 ; Vol. 277. pp. 3-8.
@article{21c0fb42b5f1431ca8a13a39e6b9a915,
title = "Suicide formation reactions in a-Si/Co multilayered samples",
abstract = "Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.",
keywords = "Co/Si, Multilayers, Non parabolic growth, Solid state reaction, Suicide formations",
author = "Z. Balogh and C. Cserh{\'a}ti and Z. Erd{\'e}lyi and A. Cs{\'i}k and G. Langer and I. Zizak and N. Darowski and E. Dudzik and R. Feyerherm and D. Beke",
year = "2008",
doi = "10.4028/3-908451-55-8.3",
language = "English",
volume = "277",
pages = "3--8",
journal = "Defect and Diffusion Forum",
issn = "1012-0386",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Suicide formation reactions in a-Si/Co multilayered samples

AU - Balogh, Z.

AU - Cserháti, C.

AU - Erdélyi, Z.

AU - Csík, A.

AU - Langer, G.

AU - Zizak, I.

AU - Darowski, N.

AU - Dudzik, E.

AU - Feyerherm, R.

AU - Beke, D.

PY - 2008

Y1 - 2008

N2 - Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.

AB - Solid state reactions between amorpous Si and crystalline Co have been investigated by synchrotron radiation at Bessy (Berlin, Germany). The multilayered samples (with 10 periods of a-Si(15 nm)/Co(15 nm) layers) were produced by magnetron sputtering and isothermally heat treated at temperatures between 523 and 593 K. From the time evolution of the XRD spectra first the growth rate of the CoSi phase as well as the decay rate of the Co layer we determined (at 523 and 543 K). The kinetics were described by a power law; tk, and for the growth of CoSi k=0.65 while for the loss of the Co the k=0.77 was obtained, respectively. At higher temperatures (at 573 and 593 K) the formation and growth of the Co2Si layer, at the expense of the Co and already existing CoSi layers, was observed with exponents of about 1 for all the above kinetics. These results, together with the results of resistance kinetics measurements, in similar multilayered as well as bi-layered samples at similar temperatures, providing similar exponents will be presented. Possibility of the interface reaction control and/or the effect of the diffusion asymmetry (which was recently published for the interpretation of solid state reactions with non-parabolic kinetics on the nanoscale) will be discussed.

KW - Co/Si

KW - Multilayers

KW - Non parabolic growth

KW - Solid state reaction

KW - Suicide formations

UR - http://www.scopus.com/inward/record.url?scp=45849120627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45849120627&partnerID=8YFLogxK

U2 - 10.4028/3-908451-55-8.3

DO - 10.4028/3-908451-55-8.3

M3 - Article

VL - 277

SP - 3

EP - 8

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

SN - 1012-0386

ER -