Submicrometer period silicon diffraction gratings by porous etching

N. Nagy, J. Volk, A. Hámori, I. Bársony

Research output: Contribution to journalArticle

11 Citations (Scopus)


We have developed a new technique to manufacture diffraction gratings on porous silicon and on silicon interface. Using holography facilitate to adjust the periodic length of gratings in the submicron range. The holographically exposured and developed photoresist applied on the silicon surface provides the mask for the ion implantation. The sinusoidal grating between the substrate and the porous silicon layer is achieved after the anodic etch process. The PS layer can be removed by alkali etching. Sinusoidal one- and two-dimensional diffraction gratings have been produced with 375 nm periodic length. Their AFM images are shown. The diffraction efficiencies were measured.

Original languageEnglish
Pages (from-to)1639-1643
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number8
Publication statusPublished - Jun 1 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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