Study on the structure of defects in a-Si:H films by positron annihilation and micro-Raman spectroscopy

P. M. Gordo, M. F.Ferreira Marques, A. P. De Lima, Zs Kajcsos

Research output: Contribution to journalArticle

Abstract

Thin films of hydrogenated amorphous silicon deposited on glass and crystalline silicon substrates by rf plasma enhanced chemical vapor deposition at different rf power were studied using slow positron beam and the Raman scattering spectroscopy in order to verify the influence of that deposition parameter on the film defect structure and on the degree of disorder. By positron annihilation spectroscopy, it was found that there are mainly two types of defects in the films: large vacancy clusters or voids and small vacancy type defects. By micro-Raman spectroscopy it was observed that the degree of structural disorder is lower for the film with large vacancy clusters and this finding was related to structural relaxation process. Light soaking induced changes attributed to major atomic rearrangements were also observed.

Original languageEnglish
Pages (from-to)1373-1378
Number of pages6
JournalActa Physica Polonica A
Volume113
Issue number5
DOIs
Publication statusPublished - May 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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