Study on spatial resolution of three-dimensional analysis by full count TOF-RBS with beryllium nanoprobe

Satoshi Abo, Takayuki Azuma, Tivadar Lohner, Fujio Wakaya, Mikio Takai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Three dimensional nanostructures fabricated by electron beam (EB) induced deposition were measured by time of flight (TOF) Rutherford backscattering spectrometry (RBS) for checking the spatial resolution of a three dimensional analysis. Pt peaks in TOF-RBS spectra for Pt stripes under a SiO 2 layer on a Si substrate samples were slightly shifted to slower position with increasing the thicknesses of the SiO 2 layer. The atomic thicknesses for SiO 2 fabricated by EB induced deposition measured by TOF-RBS were approximately 25% of the physical thicknesses obtained by a scanning electron microscope. Because SiO 2 fabricated by EB induced deposition was not a pure SiO 2 layer. The depth resolution in the three dimensional analysis with the TOF-RBS was approximately 10 nm for SiO 2 layer. Embedded Ga stripes under a SiO 2 layer and Pt stripes on a Si substrate were observed by TOF-RBS. The in-plane resolution under the SiO 2 layer was at least less than 70 nm in the three dimensional analysis with the TOF-RBS.

Original languageEnglish
Pages (from-to)266-269
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume273
DOIs
Publication statusPublished - Feb 15 2012

Keywords

  • FIB
  • Nuclear nanoprobe
  • RBS
  • Three dimensional analysis
  • Time-of-flight (TOF)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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