Study of the gas-phase parameters affecting the silicon-oxide film deposition induced by an ArF laser

P. González, D. Fernández, J. Pou, E. García, J. Serra, B. León, M. Pérez-Amor, T. Szörényi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A study of the gas-phase parameters involved in ArF laser induced chemical vapour deposition of silicon-oxide thin films is presented. A complete set of experiments has been performed showing the influence of the concentration of the precursor gases, N2O and SiH4, and their influence on total and partial pressures on film growth and properties. In this paper we demonstrate the ability of this LCVD method to deposit silicon oxide films of different compositions and densities by appropriate control of gas composition and total pressure. Moreover, a material specific calibration plot comprising data obtained using different preparation techniques is presented, allowing determination of the stoichiometry of SiOxfilms by using FTIR spectroscopy independently of the deposition method. For the range of processing conditions examined, the experimental results suggest that chemical processes governing deposition take place mainly in the gas phase.

Original languageEnglish
Pages (from-to)181-185
Number of pages5
JournalApplied Physics A Solids and Surfaces
Volume57
Issue number2
DOIs
Publication statusPublished - Aug 1 1993

Keywords

  • 68.55
  • 78.65

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

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