Study of the charge transport mechanism in pulsed laser deposited AlN: Si films

I. P. Minkov, S. Simeonov, A. Szekeres, A. Cziráki, G. Socol, C. Ristoscu, I. N. Mihailescu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

AlN films doped with Si (AlN:Si) were synthesized on p-Si(100) substrates by pulsed laser deposition. Al-AlN:Si-Si metal-insulator-silicon (MIS) structures were formed and their current-voltage characteristics measured at 77 K and 290 K were analyzed. The results revealed that the charge transport is carried through the AlN:Si-Si MIS structures by the mechanism of trap space charge limited current.

Original languageEnglish
Article number012038
JournalJournal of Physics: Conference Series
Volume356
Issue number1
DOIs
Publication statusPublished - 2012

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pulsed lasers
insulators
silicon
metals
pulsed laser deposition
space charge
traps
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Minkov, I. P., Simeonov, S., Szekeres, A., Cziráki, A., Socol, G., Ristoscu, C., & Mihailescu, I. N. (2012). Study of the charge transport mechanism in pulsed laser deposited AlN: Si films. Journal of Physics: Conference Series, 356(1), [012038]. https://doi.org/10.1088/1742-6596/356/1/012038

Study of the charge transport mechanism in pulsed laser deposited AlN : Si films. / Minkov, I. P.; Simeonov, S.; Szekeres, A.; Cziráki, A.; Socol, G.; Ristoscu, C.; Mihailescu, I. N.

In: Journal of Physics: Conference Series, Vol. 356, No. 1, 012038, 2012.

Research output: Contribution to journalArticle

Minkov, I. P. ; Simeonov, S. ; Szekeres, A. ; Cziráki, A. ; Socol, G. ; Ristoscu, C. ; Mihailescu, I. N. / Study of the charge transport mechanism in pulsed laser deposited AlN : Si films. In: Journal of Physics: Conference Series. 2012 ; Vol. 356, No. 1.
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