The annealling processes of evaporated thin film contact structures on GaAs and GaP respectively were studied by in situ simultaneous mass spectrometric and resistance measurements. The samples mounted in a liquid nitrogen cooled UHV chamber faced the entrance port /with ion source/ of a RIBER QML51 quadrupole mass spectrometer. Diodes of GaAs /100/ samples with In/Ge/Ag, Ni/Au-Ge, Sn/Ag and of GaP /111/ with Au-Ge/Ni contact structures of 400-1000 nm thickness were studied. During the annealing process the evaporation of As//2 and P//2 starts at threshold temperatures 400-600 C characteristic of the contact compositions.
|Number of pages||3|
|Publication status||Published - Jan 1 1977|
|Event||Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria|
Duration: Sep 12 1977 → Sep 16 1977
|Other||Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl|
|Period||9/12/77 → 9/16/77|
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