STUDY OF THE ARSENIC AND PHOSPHORUS LOSSES DURING ANNEALING OF METAL CONTACTS ON GaAs AND GaP.

D. Szigethy, T. Sebestyen, I. Mojzes, G. Gergely

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

The annealling processes of evaporated thin film contact structures on GaAs and GaP respectively were studied by in situ simultaneous mass spectrometric and resistance measurements. The samples mounted in a liquid nitrogen cooled UHV chamber faced the entrance port /with ion source/ of a RIBER QML51 quadrupole mass spectrometer. Diodes of GaAs /100/ samples with In/Ge/Ag, Ni/Au-Ge, Sn/Ag and of GaP /111/ with Au-Ge/Ni contact structures of 400-1000 nm thickness were studied. During the annealing process the evaporation of As//2 and P//2 starts at threshold temperatures 400-600 C characteristic of the contact compositions.

Original languageEnglish
Pages1959-1961
Number of pages3
Publication statusPublished - Jan 1 1977
EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
Duration: Sep 12 1977Sep 16 1977

Other

OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
CityVienna, Austria
Period9/12/779/16/77

ASJC Scopus subject areas

  • Engineering(all)

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    Szigethy, D., Sebestyen, T., Mojzes, I., & Gergely, G. (1977). STUDY OF THE ARSENIC AND PHOSPHORUS LOSSES DURING ANNEALING OF METAL CONTACTS ON GaAs AND GaP.. 1959-1961. Paper presented at Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl, Vienna, Austria, .