Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe

J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli, T. Rang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the present paper we attempt to study and explain the increased leakage currents in Schottky diodes with an integrated p-n structure. Using a scanning Kelvin probe method (vibrating capacitor) the local variations of surface contact potential difference (CPD) were obtained for chips with large and small leakage currents. It is shown that samples with higher leakage currents have a smaller surface potential barrier. The SEM investigations revealed that the dislocations penetrating from the substrate into the epitaxial layer play a critical role in increasing leakage currents.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012, ECSCRM 2012
Pages677-680
Number of pages4
DOIs
Publication statusPublished - Feb 25 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: Sep 2 2012Sep 6 2012

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)0255-5476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period9/2/129/6/12

Keywords

  • Dislocations
  • Kelvin probe method
  • Leakage currents
  • SEM investigations
  • Schottky diodes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Mizsei, J., Korolkov, O., Toompuu, J., Mikli, V., & Rang, T. (2013). Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe. In Silicon Carbide and Related Materials 2012, ECSCRM 2012 (pp. 677-680). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.677