Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe

J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli, T. Rang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the present paper we attempt to study and explain the increased leakage currents in Schottky diodes with an integrated p-n structure. Using a scanning Kelvin probe method (vibrating capacitor) the local variations of surface contact potential difference (CPD) were obtained for chips with large and small leakage currents. It is shown that samples with higher leakage currents have a smaller surface potential barrier. The SEM investigations revealed that the dislocations penetrating from the substrate into the epitaxial layer play a critical role in increasing leakage currents.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages677-680
Number of pages4
Volume740-742
DOIs
Publication statusPublished - 2013
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: Sep 2 2012Sep 6 2012

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)02555476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period9/2/129/6/12

Fingerprint

Surface defects
surface defects
Schottky diodes
Leakage currents
Diodes
leakage
Scanning
scanning
probes
contact potentials
Epitaxial layers
Surface potential
Dislocations (crystals)
capacitors
Capacitors
chips
Scanning electron microscopy
scanning electron microscopy
Substrates

Keywords

  • Dislocations
  • Kelvin probe method
  • Leakage currents
  • Schottky diodes
  • SEM investigations

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Mizsei, J., Korolkov, O., Toompuu, J., Mikli, V., & Rang, T. (2013). Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe. In Materials Science Forum (Vol. 740-742, pp. 677-680). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.677

Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe. / Mizsei, J.; Korolkov, O.; Toompuu, J.; Mikli, V.; Rang, T.

Materials Science Forum. Vol. 740-742 2013. p. 677-680 (Materials Science Forum; Vol. 740-742).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizsei, J, Korolkov, O, Toompuu, J, Mikli, V & Rang, T 2013, Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe. in Materials Science Forum. vol. 740-742, Materials Science Forum, vol. 740-742, pp. 677-680, 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 9/2/12. https://doi.org/10.4028/www.scientific.net/MSF.740-742.677
Mizsei J, Korolkov O, Toompuu J, Mikli V, Rang T. Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe. In Materials Science Forum. Vol. 740-742. 2013. p. 677-680. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.740-742.677
Mizsei, J. ; Korolkov, O. ; Toompuu, J. ; Mikli, V. ; Rang, T. / Study of surface defects in 4H-SiC schottky diodes using a scanning kelvin probe. Materials Science Forum. Vol. 740-742 2013. pp. 677-680 (Materials Science Forum).
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